TY - JOUR
T1 - Conjugated polymer nanoparticles as nano floating gate electrets for high performance nonvolatile organic transistor memory devices
AU - Shih, Chien Chung
AU - Chiu, Y. C.
AU - Lee, Wen Ya
AU - Chen, Jung Yao
AU - Chen, Wen Chang
N1 - Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PY - 2015/3/11
Y1 - 2015/3/11
N2 - A molecular nano-fl oating gate (NFG) of pentacene-based transistor memory devices is developed using conjugated polymer nanoparticles (CPN) as the discrete trapping sites embedded in an insulating polymer, poly (methacrylic acid) (PMAA). The nanoparticles of polyfl uorene (PF) and poly(fl uorene-altbenzo[ 2,1,3]thiadiazole (PFBT) with average diameters of around 50-70 nm are used as charge-trapping sites, while hydrophilic PMAA serves as a matrix and a tunneling layer. By inserting PF nanoparticles as the fl oating gate, the transistor memory device reveals a controllable threshold voltage shift, indicating effectively electron-trapping by the PF CPN. The electron-storage capability can be further improved using the PFBT-based NFG since their lower unoccupied molecular orbital level is benefi cial for stabilization of the trapped charges, leading a large memory window (35 V), retention time longer than 10 4 s with a high ON/OFF ratio of >10 4 . In addition, the memory device performance using conjugated polymer nanoparticle NFG is much higher than that of the corresponding polymer blend thin fi lms of PF/polystyrene. It suggests that the discrete polymer nanoparticles can be effectively covered by the tunneling layer, PMAA, to achieve the superior memory characteristics.
AB - A molecular nano-fl oating gate (NFG) of pentacene-based transistor memory devices is developed using conjugated polymer nanoparticles (CPN) as the discrete trapping sites embedded in an insulating polymer, poly (methacrylic acid) (PMAA). The nanoparticles of polyfl uorene (PF) and poly(fl uorene-altbenzo[ 2,1,3]thiadiazole (PFBT) with average diameters of around 50-70 nm are used as charge-trapping sites, while hydrophilic PMAA serves as a matrix and a tunneling layer. By inserting PF nanoparticles as the fl oating gate, the transistor memory device reveals a controllable threshold voltage shift, indicating effectively electron-trapping by the PF CPN. The electron-storage capability can be further improved using the PFBT-based NFG since their lower unoccupied molecular orbital level is benefi cial for stabilization of the trapped charges, leading a large memory window (35 V), retention time longer than 10 4 s with a high ON/OFF ratio of >10 4 . In addition, the memory device performance using conjugated polymer nanoparticle NFG is much higher than that of the corresponding polymer blend thin fi lms of PF/polystyrene. It suggests that the discrete polymer nanoparticles can be effectively covered by the tunneling layer, PMAA, to achieve the superior memory characteristics.
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U2 - 10.1002/adfm.201404329
DO - 10.1002/adfm.201404329
M3 - Article
AN - SCOPUS:85027933008
SN - 1616-301X
VL - 25
SP - 1511
EP - 1519
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 10
ER -