@inproceedings{92396892a20d427581d387644c96da29,
title = "Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors",
abstract = "Two-dimensional (2D) semiconductors are expected to have exceptional properties for ultimately scaled transistors, but forming ohmic contact to them has been challenging, which tremendously limit the transistor performance. In this paper, we review the recent research progress on the elimination of different gap-state pinning effects, including defect-induced gap states (DIGS) and metal-induced gap states (MIGS). Specifically, an oxygen passivation method and a semimetallic contact technology were developed to reduce the DIGS and MIGS, respectively. Based on these approaches, much improved contact resistance and on-state current were observed. Key device metrics were extracted on these high-performance transistors, which reveals future directions for further improving the device performance.",
author = "Y. Lin and Shen, \{P. C.\} and C. Su and Chou, \{A. S.\} and T. Wu and Cheng, \{C. C.\} and Park, \{J. H.\} and Chiu, \{M. H.\} and Lu, \{A. Y.\} and Tang, \{H. L.\} and Tavakoli, \{M. M.\} and G. Pitner and X. Ji and C. McGahan and X. Wang and Z. Cai and N. Mao and J. Wang and Y. Wang and W. Tisdale and X. Ling and Aidala, \{K. E.\} and V. Tung and J. Li and A. Zettl and Wu, \{C. I.\} and Jing Guo and H. Wang and J. Bokor and T. Palacios and Li, \{L. J.\} and J. Kong",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/IEDM19574.2021.9720668",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "37.2.1--37.2.4",
booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",
address = "United States",
}