This paper proposes a method for improving the patterning resolution of conventional contact photolithography from the micrometer, down to the sub-micrometer scale. The key element is a soft polydimethylsiloxane (PDMS) photomask, which is first replicated from a silicon mold and then patterned with a black photoresist (PR) layer to selectively block ultraviolet (UV) light. This soft PDMS photomask can easily form an intimate and conformable contact with a PR-coated substrate and hence can perform contact photolithography with high pattern resolution. The fabrication processes of this black-PR/PDMS soft photomask are experimentally carried out. Using the fabricated soft photomask, UV patterning by contact photolithography with the smallest line-width of 170 nm over a 4" wafer area was successfully achieved. The advantages and potentials of this new type of contact photolithography will be addressed.
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering