Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor

R. W. Chuang; A. Q. Zou; H. P. Lee; Z. J. Dong; F. F. Xiong; R. Shih; M. Bremser; H. Juergensen

Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor

R. W. Chuang, A. Q. Zou, H. P. Lee, Z. J. Dong, F. F. Xiong, R. Shih, M. Bremser, H. Juergensen

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 angstrom/40 angstrom) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500°C yield the lowest specific contact resistance r_c (0.016 Ω-cm² at a current density of 66.7 mA/cm). Based on the extracted r_c from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for approx. 88% of the total series resistance of the LED.

Original language	English
Pages (from-to)	G6.42
Journal	Materials Research Society Symposium - Proceedings
Volume	537
Publication status	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA Duration: 1998 Nov 30 → 1998 Dec 4

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{b5c40fb6b06241ebab9516188b6a5160,

title = "Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor",

abstract = "We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 angstrom/40 angstrom) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500°C yield the lowest specific contact resistance rc (0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for approx. 88% of the total series resistance of the LED.",

author = "Chuang, {R. W.} and Zou, {A. Q.} and Lee, {H. P.} and Dong, {Z. J.} and Xiong, {F. F.} and R. Shih and M. Bremser and H. Juergensen",

note = "Funding Information: This study was supported by Open Scientific Research Program of Military Logistics (BLB20J009).; Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' ; Conference date: 30-11-1998 Through 04-12-1998",

year = "1999",

language = "English",

volume = "537",

pages = "G6.42",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor

AU - Chuang, R. W.

AU - Zou, A. Q.

AU - Lee, H. P.

AU - Dong, Z. J.

AU - Xiong, F. F.

AU - Shih, R.

AU - Bremser, M.

AU - Juergensen, H.

N1 - Funding Information: This study was supported by Open Scientific Research Program of Military Logistics (BLB20J009).

PY - 1999

Y1 - 1999

N2 - We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 angstrom/40 angstrom) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500°C yield the lowest specific contact resistance rc (0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for approx. 88% of the total series resistance of the LED.

AB - We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 angstrom/40 angstrom) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500°C yield the lowest specific contact resistance rc (0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for approx. 88% of the total series resistance of the LED.

UR - http://www.scopus.com/inward/record.url?scp=0033338405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033338405&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033338405

SN - 0272-9172

VL - 537

SP - G6.42

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys'

Y2 - 30 November 1998 through 4 December 1998

ER -

Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor

Abstract

All Science Journal Classification (ASJC) codes

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