TY - JOUR
T1 - Contact resistivity of Re, Pt and Ta films on n-type β-SiC
T2 - Preliminary results
AU - Chen, J. S.
AU - Bächli, A.
AU - Nicolet, M. A.
AU - Baud, L.
AU - Jaussaud, C.
AU - Madar, R.
N1 - Funding Information:
We thank R. Gorris and M. Easterbrookfo r their technicaal ssistancoef this work at CaliforniaI nstitute of Technology.A fellowship to A. Bfichli from the Swiss National Science Foundation is gratefully acknowledgedW. e also thank the US Army Research Office for its financial support in Pasadenaa nd the Devisiond es RecherchesE,t udeset Techniqueso f the DRG for its financial supporti n Grenoblea nd Saint-Martin-d'Heres.
PY - 1995/1
Y1 - 1995/1
N2 - Contact resistivities of as-deposited and annealed Pt, Re and Ta films on n-type single-crystalline β-SiC(001) are characterized using a circular contact pattern and the circular transmission-line model method. The β-SiC substrates used in the experiment are n-type doped either non-intentionally to a carrier concentration of about 1017 cm-3, or by nitrogen implantation and annealing to a concentration of 5 × 1019 cm-3. The effect of a finite resistance along the circular contact rings on the measured potentials is corrected with a resistance network model. On the non-intentionally doped β-SiC substrates, Pt contacts are non-ohmic regardless of the heat treatment. The as-deposited Ta and Re contacts are ohmic with contact resistivities of 5 × 10-5 Ω cm2 and 4 × 10-4 Ω cm2 respectively. Upon annealing at 500 °C for 30 min, the resistivity of Ta increases slightly while that of Re decreases slightly. Both Ta and Re contacts become non-ohmic by annealing at 900 °C for 30 min. The as-deposited Ta, Pt and Re contacts are all ohmic on the nitrogen-implanted β-SiC substrate. The contact resistivity of the as-deposited Ta contact is the lowest and in the order of high 10-7 Ω cm2, stays about the same at 500 °C and degrades to 4.3 × 10-6 Ω cm2 at 1000 °C. The as-deposited Re contact has the highest contact resistivity of 1 × 10-4 Ω cm2 but it improves to 1 × 10-5 Ω cm2 upon annealing at 900 °C. The contact resistivity of the as-deposited Pt contacts is 6 × 10-6 Ω cm2 and increases to 1 × 10-5 Ω cm2 at 500 °C. After annealing at 900 °C for 30 min, the Pt contact on the nitrogen-implanted β-SiC is no longer ohmic. The results are compared with the reactions that take place in those systems.
AB - Contact resistivities of as-deposited and annealed Pt, Re and Ta films on n-type single-crystalline β-SiC(001) are characterized using a circular contact pattern and the circular transmission-line model method. The β-SiC substrates used in the experiment are n-type doped either non-intentionally to a carrier concentration of about 1017 cm-3, or by nitrogen implantation and annealing to a concentration of 5 × 1019 cm-3. The effect of a finite resistance along the circular contact rings on the measured potentials is corrected with a resistance network model. On the non-intentionally doped β-SiC substrates, Pt contacts are non-ohmic regardless of the heat treatment. The as-deposited Ta and Re contacts are ohmic with contact resistivities of 5 × 10-5 Ω cm2 and 4 × 10-4 Ω cm2 respectively. Upon annealing at 500 °C for 30 min, the resistivity of Ta increases slightly while that of Re decreases slightly. Both Ta and Re contacts become non-ohmic by annealing at 900 °C for 30 min. The as-deposited Ta, Pt and Re contacts are all ohmic on the nitrogen-implanted β-SiC substrate. The contact resistivity of the as-deposited Ta contact is the lowest and in the order of high 10-7 Ω cm2, stays about the same at 500 °C and degrades to 4.3 × 10-6 Ω cm2 at 1000 °C. The as-deposited Re contact has the highest contact resistivity of 1 × 10-4 Ω cm2 but it improves to 1 × 10-5 Ω cm2 upon annealing at 900 °C. The contact resistivity of the as-deposited Pt contacts is 6 × 10-6 Ω cm2 and increases to 1 × 10-5 Ω cm2 at 500 °C. After annealing at 900 °C for 30 min, the Pt contact on the nitrogen-implanted β-SiC is no longer ohmic. The results are compared with the reactions that take place in those systems.
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U2 - 10.1016/0921-5107(94)04049-A
DO - 10.1016/0921-5107(94)04049-A
M3 - Article
AN - SCOPUS:0029183227
SN - 0921-5107
VL - 29
SP - 185
EP - 189
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
IS - 1-3
ER -