Abstract
We have studied various excitonic transitions of strained Zn0.79Cd0.21Se/ZnSe double quantum wells, grown by molecular beam epitaxy on (100) GaAs substrates, using contactless dectroreflectance (CER) at 15 and 300 K. A number of intersub-band transitions in the CER spectra from the sample have been observed. An analysis of the CER spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light )-hole band state. The conduction-band offset Qc is used as on adjustable parameter to study the band offset in the strained Zn0.79Cd0.21Se/ZnSe system. The value of Qc is determined to be 0.67±0.03.
Original language | English |
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Pages (from-to) | 1043-1048 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 83 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1998 Jan 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)