The reactive-ion etching method has been widely used for fabricating GaN based devices. However, ion-induced damage degrades the performance of the resultant devices. In this paper, using KOH and H3PO4:H2O chemical solution treatments, the ohmic resistance of GaN LEDs can be improved by the removal of native oxide. However, the reverse current-voltage characteristics of the GaN LEDs are degraded because of the enlargement and the depth of the resulting hexagonal etched pits. Using thermal annealing above 700 °C, the reverse breakdown performance of the GaN LEDs can be improved by restoration of the ion-induced damage. However, at a temperature higher than 1000 °C, both the forward and reverse current-voltage characteristics of the GaN LEDs are degraded because of the decomposition of GaN and the loss of nitrogen.
|Number of pages||8|
|Journal||Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an|
|Publication status||Published - 2000 Aug 1|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering