Control and detection of organosilane polarization on nanowire field-effect transistors

M. C. Lin; C. J. Chu; L. C. Tsai; H. Y. Lin; C. S. Wu; Y. P. Wu; Y. N. Wu; D. B. Shieh; Y. W. Su; C. D. Chen

doi:10.1021/nl0719170

Control and detection of organosilane polarization on nanowire field-effect transistors

M. C. Lin, C. J. Chu, L. C. Tsai, H. Y. Lin, C. S. Wu, Y. P. Wu, Y. N. Wu, D. B. Shieh, Y. W. Su, C. D. Chen

School of Dentistry

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We demonstrated control and detection of UV-induced 3- aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.

Original language	English
Pages (from-to)	3656-3661
Number of pages	6
Journal	Nano letters
Volume	7
Issue number	12
DOIs	https://doi.org/10.1021/nl0719170
Publication status	Published - 2007 Dec

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl0719170

Cite this

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title = "Control and detection of organosilane polarization on nanowire field-effect transistors",

abstract = "We demonstrated control and detection of UV-induced 3- aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.",

author = "Lin, {M. C.} and Chu, {C. J.} and Tsai, {L. C.} and Lin, {H. Y.} and Wu, {C. S.} and Wu, {Y. P.} and Wu, {Y. N.} and Shieh, {D. B.} and Su, {Y. W.} and Chen, {C. D.}",

year = "2007",

month = dec,

doi = "10.1021/nl0719170",

language = "English",

volume = "7",

pages = "3656--3661",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "12",

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TY - JOUR

T1 - Control and detection of organosilane polarization on nanowire field-effect transistors

AU - Lin, M. C.

AU - Chu, C. J.

AU - Tsai, L. C.

AU - Lin, H. Y.

AU - Wu, C. S.

AU - Wu, Y. P.

AU - Wu, Y. N.

AU - Shieh, D. B.

AU - Su, Y. W.

AU - Chen, C. D.

PY - 2007/12

Y1 - 2007/12

N2 - We demonstrated control and detection of UV-induced 3- aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.

AB - We demonstrated control and detection of UV-induced 3- aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.

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EP - 3661

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Control and detection of organosilane polarization on nanowire field-effect transistors

Abstract

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