Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors

Ben B.Y. Hsu; Chunhui Duan; Ebinazar B. Namdas; Andrea Gutacker; Jonathan D. Yuen; Fei Huang; Yong Cao; Guillermo C. Bazan; Ifor D.W. Samuel; Alan J. Heeger

doi:10.1002/adma.201103513

Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors

Ben B.Y. Hsu, Chunhui Duan, Ebinazar B. Namdas, Andrea Gutacker, Jonathan D. Yuen, Fei Huang, Yong Cao, Guillermo C. Bazan, Ifor D.W. Samuel, Alan J. Heeger

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

84 Citations (Scopus)

Abstract

The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.

Original language	English
Pages (from-to)	1171-1175
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	9
DOIs	https://doi.org/10.1002/adma.201103513
Publication status	Published - 2012 Mar 2

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors",

abstract = "The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.",

author = "Hsu, {Ben B.Y.} and Chunhui Duan and Namdas, {Ebinazar B.} and Andrea Gutacker and Yuen, {Jonathan D.} and Fei Huang and Yong Cao and Bazan, {Guillermo C.} and Samuel, {Ifor D.W.} and Heeger, {Alan J.}",

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AU - Hsu, Ben B.Y.

AU - Duan, Chunhui

AU - Namdas, Ebinazar B.

AU - Gutacker, Andrea

AU - Yuen, Jonathan D.

AU - Huang, Fei

AU - Cao, Yong

AU - Bazan, Guillermo C.

AU - Samuel, Ifor D.W.

AU - Heeger, Alan J.

PY - 2012/3/2

Y1 - 2012/3/2

N2 - The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.

AB - The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.

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EP - 1175

JO - Advanced Materials

JF - Advanced Materials

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ER -

Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors

Abstract

All Science Journal Classification (ASJC) codes

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