Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors

Bang-Yu Hsu, Chunhui Duan, Ebinazar B. Namdas, Andrea Gutacker, Jonathan D. Yuen, Fei Huang, Yong Cao, Guillermo C. Bazan, Ifor D.W. Samuel, Alan J. Heeger

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.

Original languageEnglish
Pages (from-to)1171-1175
Number of pages5
JournalAdvanced Materials
Volume24
Issue number9
DOIs
Publication statusPublished - 2012 Mar 2

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Field effect transistors
Luminance
Gates (transistor)
Electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hsu, B-Y., Duan, C., Namdas, E. B., Gutacker, A., Yuen, J. D., Huang, F., ... Heeger, A. J. (2012). Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors. Advanced Materials, 24(9), 1171-1175. https://doi.org/10.1002/adma.201103513
Hsu, Bang-Yu ; Duan, Chunhui ; Namdas, Ebinazar B. ; Gutacker, Andrea ; Yuen, Jonathan D. ; Huang, Fei ; Cao, Yong ; Bazan, Guillermo C. ; Samuel, Ifor D.W. ; Heeger, Alan J. / Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors. In: Advanced Materials. 2012 ; Vol. 24, No. 9. pp. 1171-1175.
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Hsu, B-Y, Duan, C, Namdas, EB, Gutacker, A, Yuen, JD, Huang, F, Cao, Y, Bazan, GC, Samuel, IDW & Heeger, AJ 2012, 'Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors', Advanced Materials, vol. 24, no. 9, pp. 1171-1175. https://doi.org/10.1002/adma.201103513

Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors. / Hsu, Bang-Yu; Duan, Chunhui; Namdas, Ebinazar B.; Gutacker, Andrea; Yuen, Jonathan D.; Huang, Fei; Cao, Yong; Bazan, Guillermo C.; Samuel, Ifor D.W.; Heeger, Alan J.

In: Advanced Materials, Vol. 24, No. 9, 02.03.2012, p. 1171-1175.

Research output: Contribution to journalArticle

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AU - Duan, Chunhui

AU - Namdas, Ebinazar B.

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AU - Yuen, Jonathan D.

AU - Huang, Fei

AU - Cao, Yong

AU - Bazan, Guillermo C.

AU - Samuel, Ifor D.W.

AU - Heeger, Alan J.

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