Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors

Bang-Yu Hsu, Chunhui Duan, Ebinazar B. Namdas, Andrea Gutacker, Jonathan D. Yuen, Fei Huang, Yong Cao, Guillermo C. Bazan, Ifor D.W. Samuel, Alan J. Heeger

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)

Abstract

The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.

Original languageEnglish
Pages (from-to)1171-1175
Number of pages5
JournalAdvanced Materials
Volume24
Issue number9
DOIs
Publication statusPublished - 2012 Mar 2

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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