The InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO) is demonstrated. With the help of the LPO, the threshold voltage (Vth) can be shifted positively to 0.07 V, and enhancement-mode MOS-PHEMT is fabricated. The device with a gate metal of 1 × 100 μm2 shows a maximum transconductance of 171 mS/mm at VDS = 5 V and a maximum drain current density of 182 mA/mm at V GS = 2 V. It also exhibits a lower leakage current and an improved subthreshold swing compared to the referenced Schottky-gate InGaP/InGaAs PHEMT.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry