This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (Vth) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m2 showing a drain current density of 93 mA/mm at VGS =2.5 V and VDS =7 V and a transconductance (gm) of 50 mS/mm at VDS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2011 Jan 28|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering