Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation

Kuan Wei Lee; Hsien Cheng Lin; Fang Ming Lee; Wei Sheng Chen; Yeong Her Wang

doi:10.1149/1.3516639

Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation

Kuan Wei Lee, Hsien Cheng Lin, Fang Ming Lee, Wei Sheng Chen, Yeong Her Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (V_th) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m² showing a drain current density of 93 mA/mm at V_GS =2.5 V and V_DS =7 V and a transconductance (gm) of 50 mS/mm at V_DS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).

Original language	English
Pages (from-to)	H73-H75
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1149/1.3516639
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3516639

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title = "Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation",

abstract = "This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (Vth) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m2 showing a drain current density of 93 mA/mm at VGS =2.5 V and VDS =7 V and a transconductance (gm) of 50 mS/mm at VDS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).",

author = "Lee, {Kuan Wei} and Lin, {Hsien Cheng} and Lee, {Fang Ming} and Chen, {Wei Sheng} and Wang, {Yeong Her}",

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doi = "10.1149/1.3516639",

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T1 - Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation

AU - Lee, Kuan Wei

AU - Lin, Hsien Cheng

AU - Lee, Fang Ming

AU - Chen, Wei Sheng

AU - Wang, Yeong Her

PY - 2011

Y1 - 2011

N2 - This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (Vth) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m2 showing a drain current density of 93 mA/mm at VGS =2.5 V and VDS =7 V and a transconductance (gm) of 50 mS/mm at VDS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).

AB - This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (Vth) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m2 showing a drain current density of 93 mA/mm at VGS =2.5 V and VDS =7 V and a transconductance (gm) of 50 mS/mm at VDS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation

Abstract

All Science Journal Classification (ASJC) codes

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