Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation

Kuan Wei Lee, Hsien Cheng Lin, Fang Ming Lee, Wei Sheng Chen, Yeong Her Wang

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1 Citation (Scopus)

Abstract

This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (Vth) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m2 showing a drain current density of 93 mA/mm at VGS =2.5 V and VDS =7 V and a transconductance (gm) of 50 mS/mm at VDS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).

Original languageEnglish
Pages (from-to)H73-H75
JournalElectrochemical and Solid-State Letters
Volume14
Issue number2
DOIs
Publication statusPublished - 2011 Jan 28

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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