Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation

Kuan Wei Lee, Hsien Cheng Lin, Fang Ming Lee, Wei Sheng Chen, Yeong-Her Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (V th ) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m 2 showing a drain current density of 93 mA/mm at V GS =2.5 V and V DS =7 V and a transconductance (gm) of 50 mS/mm at V DS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number2
DOIs
Publication statusPublished - 2011 Jan 28

Fingerprint

High electron mobility transistors
high electron mobility transistors
Threshold voltage
Leakage currents
threshold voltage
aluminum gallium arsenides
liquid phases
leakage
Metals
Oxidation
oxidation
Liquids
metal oxide semiconductors
Drain current
Transconductance
Electric breakdown
transconductance
Current density
electrical faults
current density

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

@article{4671819a7d6a4c66b8e965b35377a579,
title = "Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation",
abstract = "This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (V th ) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m 2 showing a drain current density of 93 mA/mm at V GS =2.5 V and V DS =7 V and a transconductance (gm) of 50 mS/mm at V DS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).",
author = "Lee, {Kuan Wei} and Lin, {Hsien Cheng} and Lee, {Fang Ming} and Chen, {Wei Sheng} and Yeong-Her Wang",
year = "2011",
month = "1",
day = "28",
doi = "10.1149/1.3516639",
language = "English",
volume = "14",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation. / Lee, Kuan Wei; Lin, Hsien Cheng; Lee, Fang Ming; Chen, Wei Sheng; Wang, Yeong-Her.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 2, 28.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation

AU - Lee, Kuan Wei

AU - Lin, Hsien Cheng

AU - Lee, Fang Ming

AU - Chen, Wei Sheng

AU - Wang, Yeong-Her

PY - 2011/1/28

Y1 - 2011/1/28

N2 - This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (V th ) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m 2 showing a drain current density of 93 mA/mm at V GS =2.5 V and V DS =7 V and a transconductance (gm) of 50 mS/mm at V DS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).

AB - This study demonstrates an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with an oxidized GaAs gate by liquid phase oxidation (LPO). With the help of LPO, the threshold voltage (V th ) can be shifted positively to 0.3 V to form an enhancement-mode MOS-PHEMT. The device possesses a gate metal of 1×100 μ m 2 showing a drain current density of 93 mA/mm at V GS =2.5 V and V DS =7 V and a transconductance (gm) of 50 mS/mm at V DS =4 V. It also exhibits an improved breakdown voltage and a suppressed gate leakage current compared to the Schottky-gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT).

UR - http://www.scopus.com/inward/record.url?scp=78951494854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78951494854&partnerID=8YFLogxK

U2 - 10.1149/1.3516639

DO - 10.1149/1.3516639

M3 - Article

VL - 14

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 2

ER -