@inproceedings{30ccaf222b364accbc8c5130f13bad71,
title = "Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2",
abstract = "We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.",
author = "K. Ohmori and P. Ahmet and K. Shiraishi and K. Yamabe and H. Watanabe and Y. Akasaka and N. Umezawa and K. Nakajima and M. Yoshitake and T. Nakayama and Chang, {K. S.} and K. Kakushima and Y. Nara and Green, {M. L.} and H. Iwai and K. Yamada and T. Chikyow",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/ICSICT.2006.306256",
language = "English",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "376--379",
booktitle = "ICSICT-2006",
address = "United States",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}