Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

K. Ohmori; P. Ahmet; K. Shiraishi; K. Yamabe; H. Watanabe; Y. Akasaka; N. Umezawa; K. Nakajima; M. Yoshitake; T. Nakayama; K. S. Chang; K. Kakushima; Y. Nara; M. L. Green; H. Iwai; K. Yamada; T. Chikyow

doi:10.1109/ICSICT.2006.306256

Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la₂O₃ over HfO₂

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (V_fb) by using a combination of metal alloy (Pt-W)/La₂O₃ gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V _fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La₂O₃ interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La₂O₃ is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	376-379
Number of pages	4
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306256
Publication status	Published - 2006 Jan 1
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2006 Oct 23 → 2006 Oct 26

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country	China
City	Shanghai
Period	06-10-23 → 06-10-26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2006.306256

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Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., Umezawa, N., Nakajima, K., Yoshitake, M., Nakayama, T., Chang, K. S., Kakushima, K., Nara, Y., Green, M. L., Iwai, H., Yamada, K., & Chikyow, T. (2006). Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la₂O₃ over HfO₂. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 376-379). [4098113] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306256

Ohmori, K. ; Ahmet, P. ; Shiraishi, K. ; Yamabe, K. ; Watanabe, H. ; Akasaka, Y. ; Umezawa, N. ; Nakajima, K. ; Yoshitake, M. ; Nakayama, T. ; Chang, K. S. ; Kakushima, K. ; Nara, Y. ; Green, M. L. ; Iwai, H. ; Yamada, K. ; Chikyow, T. / Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la₂O₃ over HfO₂. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 376-379 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{30ccaf222b364accbc8c5130f13bad71,

title = "Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2",

abstract = "We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.",

author = "K. Ohmori and P. Ahmet and K. Shiraishi and K. Yamabe and H. Watanabe and Y. Akasaka and N. Umezawa and K. Nakajima and M. Yoshitake and T. Nakayama and Chang, {K. S.} and K. Kakushima and Y. Nara and Green, {M. L.} and H. Iwai and K. Yamada and T. Chikyow",

year = "2006",

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doi = "10.1109/ICSICT.2006.306256",

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series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "376--379",

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note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

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Ohmori, K, Ahmet, P, Shiraishi, K, Yamabe, K, Watanabe, H, Akasaka, Y, Umezawa, N, Nakajima, K, Yoshitake, M, Nakayama, T, Chang, KS, Kakushima, K, Nara, Y, Green, ML, Iwai, H, Yamada, K & Chikyow, T 2006, Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la₂O₃ over HfO₂. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098113, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 376-379, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06-10-23. https://doi.org/10.1109/ICSICT.2006.306256

Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la₂O₃ over HfO₂. / Ohmori, K.; Ahmet, P.; Shiraishi, K.; Yamabe, K.; Watanabe, H.; Akasaka, Y.; Umezawa, N.; Nakajima, K.; Yoshitake, M.; Nakayama, T.; Chang, K. S.; Kakushima, K.; Nara, Y.; Green, M. L.; Iwai, H.; Yamada, K.; Chikyow, T.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 376-379 4098113 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

AU - Ohmori, K.

AU - Ahmet, P.

AU - Shiraishi, K.

AU - Yamabe, K.

AU - Watanabe, H.

AU - Akasaka, Y.

AU - Umezawa, N.

AU - Nakajima, K.

AU - Yoshitake, M.

AU - Nakayama, T.

AU - Chang, K. S.

AU - Kakushima, K.

AU - Nara, Y.

AU - Green, M. L.

AU - Iwai, H.

AU - Yamada, K.

AU - Chikyow, T.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

AB - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

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U2 - 10.1109/ICSICT.2006.306256

DO - 10.1109/ICSICT.2006.306256

M3 - Conference contribution

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 376

EP - 379

BT - ICSICT-2006

PB - IEEE Computer Society

T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 23 October 2006 through 26 October 2006

ER -

Ohmori K, Ahmet P, Shiraishi K, Yamabe K, Watanabe H, Akasaka Y et al. Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la₂O₃ over HfO₂. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 376-379. 4098113. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306256