Abstract
We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.
| Original language | English |
|---|---|
| Title of host publication | ICSICT-2006 |
| Subtitle of host publication | 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings |
| Publisher | IEEE Computer Society |
| Pages | 376-379 |
| Number of pages | 4 |
| ISBN (Print) | 1424401615, 9781424401611 |
| DOIs | |
| Publication status | Published - 2006 Jan 1 |
| Event | ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2006 Oct 23 → 2006 Oct 26 |
Publication series
| Name | ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings |
|---|
Other
| Other | ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology |
|---|---|
| Country | China |
| City | Shanghai |
| Period | 06-10-23 → 06-10-26 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. / Ohmori, K.; Ahmet, P.; Shiraishi, K.; Yamabe, K.; Watanabe, H.; Akasaka, Y.; Umezawa, N.; Nakajima, K.; Yoshitake, M.; Nakayama, T.; Chang, K. S.; Kakushima, K.; Nara, Y.; Green, M. L.; Iwai, H.; Yamada, K.; Chikyow, T.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 376-379 4098113 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2
AU - Ohmori, K.
AU - Ahmet, P.
AU - Shiraishi, K.
AU - Yamabe, K.
AU - Watanabe, H.
AU - Akasaka, Y.
AU - Umezawa, N.
AU - Nakajima, K.
AU - Yoshitake, M.
AU - Nakayama, T.
AU - Chang, K. S.
AU - Kakushima, K.
AU - Nara, Y.
AU - Green, M. L.
AU - Iwai, H.
AU - Yamada, K.
AU - Chikyow, T.
PY - 2006/1/1
Y1 - 2006/1/1
N2 - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.
AB - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.
UR - http://www.scopus.com/inward/record.url?scp=34547271018&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547271018&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2006.306256
DO - 10.1109/ICSICT.2006.306256
M3 - Conference contribution
AN - SCOPUS:34547271018
SN - 1424401615
SN - 9781424401611
T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 376
EP - 379
BT - ICSICT-2006
PB - IEEE Computer Society
ER -