Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages376-379
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006 Jan 1
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06-10-2306-10-26

Fingerprint

Controllability
Electric potential
Gases
Charge transfer
Annealing
Metals
Chemical analysis
High-k dielectric

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., ... Chikyow, T. (2006). Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 376-379). [4098113] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306256
Ohmori, K. ; Ahmet, P. ; Shiraishi, K. ; Yamabe, K. ; Watanabe, H. ; Akasaka, Y. ; Umezawa, N. ; Nakajima, K. ; Yoshitake, M. ; Nakayama, T. ; Chang, K. S. ; Kakushima, K. ; Nara, Y. ; Green, M. L. ; Iwai, H. ; Yamada, K. ; Chikyow, T. / Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 376-379 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).
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abstract = "We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.",
author = "K. Ohmori and P. Ahmet and K. Shiraishi and K. Yamabe and H. Watanabe and Y. Akasaka and N. Umezawa and K. Nakajima and M. Yoshitake and T. Nakayama and Chang, {K. S.} and K. Kakushima and Y. Nara and Green, {M. L.} and H. Iwai and K. Yamada and T. Chikyow",
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Ohmori, K, Ahmet, P, Shiraishi, K, Yamabe, K, Watanabe, H, Akasaka, Y, Umezawa, N, Nakajima, K, Yoshitake, M, Nakayama, T, Chang, KS, Kakushima, K, Nara, Y, Green, ML, Iwai, H, Yamada, K & Chikyow, T 2006, Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098113, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 376-379, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06-10-23. https://doi.org/10.1109/ICSICT.2006.306256

Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. / Ohmori, K.; Ahmet, P.; Shiraishi, K.; Yamabe, K.; Watanabe, H.; Akasaka, Y.; Umezawa, N.; Nakajima, K.; Yoshitake, M.; Nakayama, T.; Chang, K. S.; Kakushima, K.; Nara, Y.; Green, M. L.; Iwai, H.; Yamada, K.; Chikyow, T.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 376-379 4098113 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

AU - Ohmori, K.

AU - Ahmet, P.

AU - Shiraishi, K.

AU - Yamabe, K.

AU - Watanabe, H.

AU - Akasaka, Y.

AU - Umezawa, N.

AU - Nakajima, K.

AU - Yoshitake, M.

AU - Nakayama, T.

AU - Chang, K. S.

AU - Kakushima, K.

AU - Nara, Y.

AU - Green, M. L.

AU - Iwai, H.

AU - Yamada, K.

AU - Chikyow, T.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

AB - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

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U2 - 10.1109/ICSICT.2006.306256

DO - 10.1109/ICSICT.2006.306256

M3 - Conference contribution

AN - SCOPUS:34547271018

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 376

EP - 379

BT - ICSICT-2006

PB - IEEE Computer Society

ER -

Ohmori K, Ahmet P, Shiraishi K, Yamabe K, Watanabe H, Akasaka Y et al. Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 376-379. 4098113. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306256