Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

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Engineering & Materials Science