Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure

Jan Shing Su, Wei Chou Hsu, Yu Shyan Lin, Wei Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Three-terminal GaAs/InGaAs/GaAs pseudomorphic real-space transfer heterostructure employing graded channel as the emitter layer grown by low-pressure metal-organic chemical-vapor deposition has been fabricated. We observe controllable drain cut-in voltage characteristics with strong negative differential resistance. The largest peak-to-valley current ratio of the proposed device is about 33 000 at room temperature. Moreover, we observe an energy exchange effect between electrons.

Original languageEnglish
Pages (from-to)1002-1004
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number8
DOIs
Publication statusPublished - 1997 Feb 24

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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