Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties

W. W. Wu, Kuo-Chang Lu, K. N. Chen, P. H. Yeh, C. W. Wang, Y. C. Lin, Yu Huang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Unusually large and compressively strained Si in nanoheterostructures of Ni silicide/Si/Ni silicide, in which the strain of the Si region can be achieved up to 10%, has been produced with point contact reactions between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The growth rate and relationships between the strain and the spacing of the Si region have been measured. Based on the rate and relationships, we can control the Si dimension and, in turn, the strain of remaining Si can be tuned with appropriate spacing. Since one-dimensional nanoheterostructures may have potential applications in nanoelectronic devices, the existent strain will further affect carrier mobility and piezoresistance coefficients in the Si region. Electrical measurements on the nanodevices from such nanoheterostructures show that the current output closely correlates with the Si channel length and compressive strain.

Original languageEnglish
Article number203110
JournalApplied Physics Letters
Volume97
Issue number20
DOIs
Publication statusPublished - 2010 Nov 15

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nanowires
transport properties
spacing
carrier mobility
electrical measurement
ultrahigh vacuum
electrons
electron microscopes
output
coefficients

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wu, W. W. ; Lu, Kuo-Chang ; Chen, K. N. ; Yeh, P. H. ; Wang, C. W. ; Lin, Y. C. ; Huang, Yu. / Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties. In: Applied Physics Letters. 2010 ; Vol. 97, No. 20.
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Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties. / Wu, W. W.; Lu, Kuo-Chang; Chen, K. N.; Yeh, P. H.; Wang, C. W.; Lin, Y. C.; Huang, Yu.

In: Applied Physics Letters, Vol. 97, No. 20, 203110, 15.11.2010.

Research output: Contribution to journalArticle

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AU - Wu, W. W.

AU - Lu, Kuo-Chang

AU - Chen, K. N.

AU - Yeh, P. H.

AU - Wang, C. W.

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AB - Unusually large and compressively strained Si in nanoheterostructures of Ni silicide/Si/Ni silicide, in which the strain of the Si region can be achieved up to 10%, has been produced with point contact reactions between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The growth rate and relationships between the strain and the spacing of the Si region have been measured. Based on the rate and relationships, we can control the Si dimension and, in turn, the strain of remaining Si can be tuned with appropriate spacing. Since one-dimensional nanoheterostructures may have potential applications in nanoelectronic devices, the existent strain will further affect carrier mobility and piezoresistance coefficients in the Si region. Electrical measurements on the nanodevices from such nanoheterostructures show that the current output closely correlates with the Si channel length and compressive strain.

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