Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching

S. C. Hung, Y. K. Su, Shoou-Jinn Chang, T. C. Liang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work, we fabricated GaN hollow nanorods by using inductively coupled plasma (ICP) etching. We found that tops of these nanotubes were hexagonal with the c-axis perpendicular to substrate surface. We also found that density of the GaN nanorods were not strongly dependent on etching parameters, which suggests that the formation of these GaN nanotubes was related to the dislocation density in the original GaN epitaxial layers. Furthermore, it was found that we could reduce the dimension and increase the density of the GaN nanotubes by decreasing the Ar concentrations during ICP etching.

Original languageEnglish
Title of host publicationProceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
Pages1392-1395
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS - Zhuhai, China
Duration: 2006 Jan 182006 Jan 21

Publication series

NameProceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Other

Other1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
CountryChina
CityZhuhai
Period06-01-1806-01-21

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Materials Science (miscellaneous)

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