Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching

S. C. Hung; Y. K. Su; S. J. Chang; T. C. Liang

doi:10.1109/NEMS.2006.334773

Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching

S. C. Hung, Y. K. Su, S. J. Chang, T. C. Liang

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In this work, we fabricated GaN hollow nanorods by using inductively coupled plasma (ICP) etching. We found that tops of these nanotubes were hexagonal with the c-axis perpendicular to substrate surface. We also found that density of the GaN nanorods were not strongly dependent on etching parameters, which suggests that the formation of these GaN nanotubes was related to the dislocation density in the original GaN epitaxial layers. Furthermore, it was found that we could reduce the dimension and increase the density of the GaN nanotubes by decreasing the Ar concentrations during ICP etching.

Original language	English
Title of host publication	Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
Pages	1392-1395
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2006.334773
Publication status	Published - 2006
Event	1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS - Zhuhai, China Duration: 2006 Jan 18 → 2006 Jan 21

Publication series

Name	Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Other

Other	1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
Country/Territory	China
City	Zhuhai
Period	06-01-18 → 06-01-21

All Science Journal Classification (ASJC) codes

Biotechnology
Materials Science (miscellaneous)

Access to Document

10.1109/NEMS.2006.334773

Cite this

Hung, S. C., Su, Y. K., Chang, S. J., & Liang, T. C. (2006). Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching. In Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS (pp. 1392-1395). Article 4135203 (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS). https://doi.org/10.1109/NEMS.2006.334773

Hung, S. C. ; Su, Y. K. ; Chang, S. J. et al. / Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching. Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. 2006. pp. 1392-1395 (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS).

@inproceedings{0ae99bc825514ed6833ad0832a8b727b,

title = "Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching",

abstract = "In this work, we fabricated GaN hollow nanorods by using inductively coupled plasma (ICP) etching. We found that tops of these nanotubes were hexagonal with the c-axis perpendicular to substrate surface. We also found that density of the GaN nanorods were not strongly dependent on etching parameters, which suggests that the formation of these GaN nanotubes was related to the dislocation density in the original GaN epitaxial layers. Furthermore, it was found that we could reduce the dimension and increase the density of the GaN nanotubes by decreasing the Ar concentrations during ICP etching.",

author = "Hung, {S. C.} and Su, {Y. K.} and Chang, {S. J.} and Liang, {T. C.}",

note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS ; Conference date: 18-01-2006 Through 21-01-2006",

year = "2006",

doi = "10.1109/NEMS.2006.334773",

language = "English",

isbn = "1424401402",

series = "Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS",

pages = "1392--1395",

booktitle = "Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS",

}

Hung, SC, Su, YK, Chang, SJ & Liang, TC 2006, Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching. in Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS., 4135203, Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS, pp. 1392-1395, 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS, Zhuhai, China, 06-01-18. https://doi.org/10.1109/NEMS.2006.334773

Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching. / Hung, S. C.; Su, Y. K.; Chang, S. J. et al.
Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. 2006. p. 1392-1395 4135203 (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching

AU - Hung, S. C.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Liang, T. C.

PY - 2006

Y1 - 2006

N2 - In this work, we fabricated GaN hollow nanorods by using inductively coupled plasma (ICP) etching. We found that tops of these nanotubes were hexagonal with the c-axis perpendicular to substrate surface. We also found that density of the GaN nanorods were not strongly dependent on etching parameters, which suggests that the formation of these GaN nanotubes was related to the dislocation density in the original GaN epitaxial layers. Furthermore, it was found that we could reduce the dimension and increase the density of the GaN nanotubes by decreasing the Ar concentrations during ICP etching.

AB - In this work, we fabricated GaN hollow nanorods by using inductively coupled plasma (ICP) etching. We found that tops of these nanotubes were hexagonal with the c-axis perpendicular to substrate surface. We also found that density of the GaN nanorods were not strongly dependent on etching parameters, which suggests that the formation of these GaN nanotubes was related to the dislocation density in the original GaN epitaxial layers. Furthermore, it was found that we could reduce the dimension and increase the density of the GaN nanotubes by decreasing the Ar concentrations during ICP etching.

UR - http://www.scopus.com/inward/record.url?scp=46149127350&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46149127350&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2006.334773

DO - 10.1109/NEMS.2006.334773

M3 - Conference contribution

AN - SCOPUS:46149127350

SN - 1424401402

SN - 9781424401406

T3 - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

SP - 1392

EP - 1395

BT - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

T2 - 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Y2 - 18 January 2006 through 21 January 2006

ER -

Hung SC, Su YK, Chang SJ, Liang TC. Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching. In Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. 2006. p. 1392-1395. 4135203. (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS). doi: 10.1109/NEMS.2006.334773

Controlled self-formation of GaN nanotubes by inductively coupled plasmas etching

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this