Engineering & Materials Science
Gallium nitride
100%
Surface morphology
81%
Thin films
68%
Epitaxial growth
67%
Cathodoluminescence
45%
Growth temperature
38%
Molecular beam epitaxy
37%
Defects
33%
Raman spectroscopy
32%
Sapphire
32%
Field emission
30%
Atomic force microscopy
30%
Nitrides
29%
Optoelectronic devices
28%
Topography
27%
Diffraction
26%
Energy dispersive spectroscopy
24%
Transmission electron microscopy
24%
Plasmas
22%
X rays
21%
Scanning electron microscopy
19%
Substrates
17%
Physics & Astronomy
gallium nitrides
84%
tuning
54%
nitrogen
53%
thin films
22%
plane stress
17%
defects
16%
cathodoluminescence
15%
optoelectronic devices
14%
epitaxy
14%
topography
13%
nitrides
13%
field emission
13%
x ray diffraction
12%
radio frequencies
12%
Raman spectroscopy
12%
molecular beam epitaxy
12%
sapphire
12%
atomic force microscopy
11%
low frequencies
10%
transmission electron microscopy
9%
scanning electron microscopy
9%
high resolution
8%
curves
7%
spectroscopy
7%
temperature
4%
energy
4%
Chemical Compounds
Nitride
70%
Epitaxial Growth
58%
Nitrogen
43%
Molecular Beam Epitaxy
34%
Cathodoluminescence
32%
Energy-Dispersive Spectroscopy
25%
Purity
24%
Surface
23%
Optoelectronics
21%
Atomic Force Microscopy
19%
Raman Spectroscopy
18%
Transmission Electron Microscopy
15%
Molecular Cluster
15%
Liquid Film
11%