Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal-oxide-semiconductor field-effect transistors

Jone F. Chen, Chih Pin Tsao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A report on the relationship between hot carrier induced drain current degradation and characterization drain voltage in n-channel MOSFET fabricated using 0.18 μm technology, was presented. It was shown that the maximum drain current degradation occurs at a characterization drain voltage that is higher than 0.1 V. This phenomenon is due to two competing mechanisms as the characterization drain voltage increases: the reduction in channel inversion charges and the reduction in charged interface states.

Original languageEnglish
Pages (from-to)1872-1874
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number9
DOIs
Publication statusPublished - 2003 Sep 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal-oxide-semiconductor field-effect transistors'. Together they form a unique fingerprint.

Cite this