Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal-oxide-semiconductor field-effect transistors

Jone-Fang Chen, Chih Pin Tsao

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A report on the relationship between hot carrier induced drain current degradation and characterization drain voltage in n-channel MOSFET fabricated using 0.18 μm technology, was presented. It was shown that the maximum drain current degradation occurs at a characterization drain voltage that is higher than 0.1 V. This phenomenon is due to two competing mechanisms as the characterization drain voltage increases: the reduction in channel inversion charges and the reduction in charged interface states.

Original languageEnglish
Pages (from-to)1872-1874
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number9
DOIs
Publication statusPublished - 2003 Sep 1

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metal oxide semiconductors
field effect transistors
degradation
saturation
electric potential
inversions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "A report on the relationship between hot carrier induced drain current degradation and characterization drain voltage in n-channel MOSFET fabricated using 0.18 μm technology, was presented. It was shown that the maximum drain current degradation occurs at a characterization drain voltage that is higher than 0.1 V. This phenomenon is due to two competing mechanisms as the characterization drain voltage increases: the reduction in channel inversion charges and the reduction in charged interface states.",
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