Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer

Chun Ta Yu, Wei Chih Lai, Cheng Hsiung Yen, Ching Wen Chang, Li Wei Tu, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The crystal quality, electrical, and optical characteristics of GaN solar cells (SCs) were improved using ex situ AlN nucleation layer. Replacing the in situ GaN nucleation layer with the sputtered ex situ AlN nucleation layer reduced the total dislocation density of GaN layer from 3.7 × 108 to 2.2 × 108 cm-2. The dislocation density reduction of GaN with sputtered ex situ AlN nucleation could suppress the reverse leakage current and the forward recombination current in low forward voltage range of SCs, and thus can increase shortcircuit current density ( Jsc) and open-circuit voltage (Voc) of the SCs. A 1-sun power conversion efficiency (η%) of SCs with ex situ AlN nucleation (1.89%) showed an enhancement of 26% compared with that of conventional SC (1.50%). Furthermore, the 100-sun η% of SCs with ex situ AlN nucleation (1.97%) showed 18% improvement compared with that of conventional SC (1.67%).

Original languageEnglish
Article number7078911
Pages (from-to)1473-1477
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume62
Issue number5
DOIs
Publication statusPublished - 2015 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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