Abstract
This paper reports a low cost method of converting SiO2 or silica based into crystalline silicon by simple thermal annealing of Ti/Al coated SiO2 or silica glass slides. The studies were performed using Raman scattering and x-ray diffraction. The results suggest that it is possible to extract reasonably good quality crystalline silicon from SiO2 based substrates. This technique may have a wide range of applications in Si-based optoelectronics and other industry.
Original language | English |
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Pages (from-to) | 207-211 |
Number of pages | 5 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3630 |
DOIs | |
Publication status | Published - 1999 |
Event | Proceedings of the 1999 Silicon-based Optoelectronics - San Jose, CA, USA Duration: 1999 Jan 27 → 1999 Jan 28 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering