Cooperative arrangement of self-assembled Ge dots on pre-grown Si mesas

G. Jin, J. L. Liu, Y. H. Luo, K. L. Wang

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


In this work, we report on the study of one-dimensional (1-D) and two-dimensional (2-D) cooperative arrangements of self-assembled Ge dots grown on patterned Si (001) substrates. Selective epitaxial growth (SEG) of Si mesas was first performed to form Si mesas before Ge deposition. Self-assembled growths of Ge dots with variable Ge amount have been carried out. It is found that the cooperative arrangements of Ge dots are dependent on Ge amount deposited. The cooperative arrangements is attributed to the self-regulation of the dot size and position, which is driven by the minimization of the total free energy including strain energy, surface energy and deformation repulsive energy. This cooperative arrangement promoted by the energetically preferential nucleation on Si mesas allows us to control the placement of the self-assembled dots at the specific positions.

Original languageEnglish
Pages (from-to)169-172
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2000 Dec 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Cooperative arrangement of self-assembled Ge dots on pre-grown Si mesas'. Together they form a unique fingerprint.

Cite this