Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications

Cheng Shih Lee; Yi Chung Lien; Edward Yi Chang; Huang Choung Chang; Szu Houng Chen; Ching Ting Lee; Li Hsin Chu; Shang Wen Chang; Yen Chang Hsieh

doi:10.1109/TED.2006.876578

Copper-airbridged low-noise GaAs PHEMT with Ti/WN_x/Ti diffusion barrier for high-frequency applications

Cheng Shih Lee, Yi Chung Lien, Edward Yi Chang, Huang Choung Chang, Szu Houng Chen, Ching Ting Lee, Li Hsin Chu, Shang Wen Chang, Yen Chang Hsieh

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A GaAs pseudomorphic HEMT (PHEMT) with Cu-metallized interconnects was successfully developed. Sputtered WN_x was used as the diffusion barrier and Ti was used as the adhesion layer to improve the adhesion between WN_x/Cu interface in the thin-metal structure. After copper metallization, the PHEMTs were passivated with silicon nitride to avoid copper oxidation. The Cu-airbridged PHEMT showed the saturation I_DS was 250 mA/mm and the g_mwas 456 mS/mm. The Ti adhesion layer plays a significant role on the g_m and V_p uniformity of the Cu-metallized PHEMTs. The GaAs PHEMTs with TI/WN_x/Ti/Cu multilayer have better noise figure and associated gain than those of the devices without the Ti adhesion layer. The fabricated Cu-metallized GaAs PHEMT with Ti/WN_x/Ti/Cu multilayer has a noise figure of 0.76 dB and an associated gain of 8.8 dB at 16 GHz. The cutoff frequency (f_T) is 70 GHz when biased at V_DS = 1.5 V. These results show that the Ti/WN_x/Ti multilayer can serve as a good diffusion barrier for Cu metallization process of airbridge interconnects on GaAs lownoise PHEMTs.

Original language	English
Pages (from-to)	1753-1758
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	8
DOIs	https://doi.org/10.1109/TED.2006.876578
Publication status	Published - 2006 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2006.876578

Cite this

@article{1dba507056bf41248802fe9060d7ada7,

title = "Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications",

abstract = "A GaAs pseudomorphic HEMT (PHEMT) with Cu-metallized interconnects was successfully developed. Sputtered WNx was used as the diffusion barrier and Ti was used as the adhesion layer to improve the adhesion between WNx/Cu interface in the thin-metal structure. After copper metallization, the PHEMTs were passivated with silicon nitride to avoid copper oxidation. The Cu-airbridged PHEMT showed the saturation IDS was 250 mA/mm and the gmwas 456 mS/mm. The Ti adhesion layer plays a significant role on the gm and Vp uniformity of the Cu-metallized PHEMTs. The GaAs PHEMTs with TI/WNx/Ti/Cu multilayer have better noise figure and associated gain than those of the devices without the Ti adhesion layer. The fabricated Cu-metallized GaAs PHEMT with Ti/WNx/Ti/Cu multilayer has a noise figure of 0.76 dB and an associated gain of 8.8 dB at 16 GHz. The cutoff frequency (fT) is 70 GHz when biased at VDS = 1.5 V. These results show that the Ti/WNx/Ti multilayer can serve as a good diffusion barrier for Cu metallization process of airbridge interconnects on GaAs lownoise PHEMTs.",

author = "Lee, {Cheng Shih} and Lien, {Yi Chung} and Chang, {Edward Yi} and Chang, {Huang Choung} and Chen, {Szu Houng} and Lee, {Ching Ting} and Chu, {Li Hsin} and Chang, {Shang Wen} and Hsieh, {Yen Chang}",

note = "Funding Information: Manuscript received February 28, 2006. This work was supported by the National Science Council under the Contract NSC93-2215-E-009-019 and NSC94-2752-E-009-001-PAE. The review of this paper was arranged by Editor Y.-J. Chan.",

year = "2006",

month = aug,

doi = "10.1109/TED.2006.876578",

language = "English",

volume = "53",

pages = "1753--1758",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications

AU - Lee, Cheng Shih

AU - Lien, Yi Chung

AU - Chang, Edward Yi

AU - Chang, Huang Choung

AU - Chen, Szu Houng

AU - Lee, Ching Ting

AU - Chu, Li Hsin

AU - Chang, Shang Wen

AU - Hsieh, Yen Chang

N1 - Funding Information: Manuscript received February 28, 2006. This work was supported by the National Science Council under the Contract NSC93-2215-E-009-019 and NSC94-2752-E-009-001-PAE. The review of this paper was arranged by Editor Y.-J. Chan.

PY - 2006/8

Y1 - 2006/8

N2 - A GaAs pseudomorphic HEMT (PHEMT) with Cu-metallized interconnects was successfully developed. Sputtered WNx was used as the diffusion barrier and Ti was used as the adhesion layer to improve the adhesion between WNx/Cu interface in the thin-metal structure. After copper metallization, the PHEMTs were passivated with silicon nitride to avoid copper oxidation. The Cu-airbridged PHEMT showed the saturation IDS was 250 mA/mm and the gmwas 456 mS/mm. The Ti adhesion layer plays a significant role on the gm and Vp uniformity of the Cu-metallized PHEMTs. The GaAs PHEMTs with TI/WNx/Ti/Cu multilayer have better noise figure and associated gain than those of the devices without the Ti adhesion layer. The fabricated Cu-metallized GaAs PHEMT with Ti/WNx/Ti/Cu multilayer has a noise figure of 0.76 dB and an associated gain of 8.8 dB at 16 GHz. The cutoff frequency (fT) is 70 GHz when biased at VDS = 1.5 V. These results show that the Ti/WNx/Ti multilayer can serve as a good diffusion barrier for Cu metallization process of airbridge interconnects on GaAs lownoise PHEMTs.

AB - A GaAs pseudomorphic HEMT (PHEMT) with Cu-metallized interconnects was successfully developed. Sputtered WNx was used as the diffusion barrier and Ti was used as the adhesion layer to improve the adhesion between WNx/Cu interface in the thin-metal structure. After copper metallization, the PHEMTs were passivated with silicon nitride to avoid copper oxidation. The Cu-airbridged PHEMT showed the saturation IDS was 250 mA/mm and the gmwas 456 mS/mm. The Ti adhesion layer plays a significant role on the gm and Vp uniformity of the Cu-metallized PHEMTs. The GaAs PHEMTs with TI/WNx/Ti/Cu multilayer have better noise figure and associated gain than those of the devices without the Ti adhesion layer. The fabricated Cu-metallized GaAs PHEMT with Ti/WNx/Ti/Cu multilayer has a noise figure of 0.76 dB and an associated gain of 8.8 dB at 16 GHz. The cutoff frequency (fT) is 70 GHz when biased at VDS = 1.5 V. These results show that the Ti/WNx/Ti multilayer can serve as a good diffusion barrier for Cu metallization process of airbridge interconnects on GaAs lownoise PHEMTs.

UR - http://www.scopus.com/inward/record.url?scp=33746636430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746636430&partnerID=8YFLogxK

U2 - 10.1109/TED.2006.876578

DO - 10.1109/TED.2006.876578

M3 - Article

AN - SCOPUS:33746636430

SN - 0018-9383

VL - 53

SP - 1753

EP - 1758

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Copper-airbridged low-noise GaAs PHEMT with Ti/WN_x/Ti diffusion barrier for high-frequency applications

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this