Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H

Kuo Chung Hsu, Dung Ching Perng, Jia Bin Yeh, Ruo Ping Chang, Jia Feng Fang, Climbing Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The thermal properties of 10 nm W-Mo alloy films as copper diffusion barrier on porous SiOCH were studied. The GIXRD results show that this layer has great barrier capabilities against copper penetration. Cross-sectional TEM image and EDS line profiles taken from TEM sample indicate Mo and W still accumulate at the interface. Sharp decline of Cu and Si concentrations at interface and lack of Cu penetrations to porous SiOCH, indicating that W-Mo barrier was effective for sample annealed at 600°C for 30min. Cu agglomeration occurred after 5 min 700°C annealing, suggesting that Cu had poor adhesion to underneath barrier. The 10nm W-Mo layer could be a potential barrier candidate for advanced copper interconnects.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2008, AMC 2008
Pages313-317
Number of pages5
Publication statusPublished - 2009 Oct 19
EventAdvanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
Duration: 2008 Sep 232008 Sep 25

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2008, AMC 2008
CountryUnited States
CitySan Diego, CA
Period08-09-2308-09-25

Fingerprint

Diffusion barriers
Copper
Transmission electron microscopy
Energy dispersive spectroscopy
Thermodynamic properties
Adhesion
Agglomeration
Annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

Cite this

Hsu, K. C., Perng, D. C., Yeh, J. B., Chang, R. P., Fang, J. F., & Huang, C. (2009). Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H. In Advanced Metallization Conference 2008, AMC 2008 (pp. 313-317). (Advanced Metallization Conference (AMC)).
Hsu, Kuo Chung ; Perng, Dung Ching ; Yeh, Jia Bin ; Chang, Ruo Ping ; Fang, Jia Feng ; Huang, Climbing. / Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H. Advanced Metallization Conference 2008, AMC 2008. 2009. pp. 313-317 (Advanced Metallization Conference (AMC)).
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title = "Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H",
abstract = "The thermal properties of 10 nm W-Mo alloy films as copper diffusion barrier on porous SiOCH were studied. The GIXRD results show that this layer has great barrier capabilities against copper penetration. Cross-sectional TEM image and EDS line profiles taken from TEM sample indicate Mo and W still accumulate at the interface. Sharp decline of Cu and Si concentrations at interface and lack of Cu penetrations to porous SiOCH, indicating that W-Mo barrier was effective for sample annealed at 600°C for 30min. Cu agglomeration occurred after 5 min 700°C annealing, suggesting that Cu had poor adhesion to underneath barrier. The 10nm W-Mo layer could be a potential barrier candidate for advanced copper interconnects.",
author = "Hsu, {Kuo Chung} and Perng, {Dung Ching} and Yeh, {Jia Bin} and Chang, {Ruo Ping} and Fang, {Jia Feng} and Climbing Huang",
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Hsu, KC, Perng, DC, Yeh, JB, Chang, RP, Fang, JF & Huang, C 2009, Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H. in Advanced Metallization Conference 2008, AMC 2008. Advanced Metallization Conference (AMC), pp. 313-317, Advanced Metallization Conference 2008, AMC 2008, San Diego, CA, United States, 08-09-23.

Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H. / Hsu, Kuo Chung; Perng, Dung Ching; Yeh, Jia Bin; Chang, Ruo Ping; Fang, Jia Feng; Huang, Climbing.

Advanced Metallization Conference 2008, AMC 2008. 2009. p. 313-317 (Advanced Metallization Conference (AMC)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The thermal properties of 10 nm W-Mo alloy films as copper diffusion barrier on porous SiOCH were studied. The GIXRD results show that this layer has great barrier capabilities against copper penetration. Cross-sectional TEM image and EDS line profiles taken from TEM sample indicate Mo and W still accumulate at the interface. Sharp decline of Cu and Si concentrations at interface and lack of Cu penetrations to porous SiOCH, indicating that W-Mo barrier was effective for sample annealed at 600°C for 30min. Cu agglomeration occurred after 5 min 700°C annealing, suggesting that Cu had poor adhesion to underneath barrier. The 10nm W-Mo layer could be a potential barrier candidate for advanced copper interconnects.

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Hsu KC, Perng DC, Yeh JB, Chang RP, Fang JF, Huang C. Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H. In Advanced Metallization Conference 2008, AMC 2008. 2009. p. 313-317. (Advanced Metallization Conference (AMC)).