@inproceedings{46a38178e20e48ebbb2694ec22d72604,
title = "Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H",
abstract = "The thermal properties of 10 nm W-Mo alloy films as copper diffusion barrier on porous SiOCH were studied. The GIXRD results show that this layer has great barrier capabilities against copper penetration. Cross-sectional TEM image and EDS line profiles taken from TEM sample indicate Mo and W still accumulate at the interface. Sharp decline of Cu and Si concentrations at interface and lack of Cu penetrations to porous SiOCH, indicating that W-Mo barrier was effective for sample annealed at 600°C for 30min. Cu agglomeration occurred after 5 min 700°C annealing, suggesting that Cu had poor adhesion to underneath barrier. The 10nm W-Mo layer could be a potential barrier candidate for advanced copper interconnects.",
author = "Hsu, \{Kuo Chung\} and Perng, \{Dung Ching\} and Yeh, \{Jia Bin\} and Chang, \{Ruo Ping\} and Fang, \{Jia Feng\} and Climbing Huang",
year = "2009",
language = "English",
isbn = "9781605111254",
series = "Advanced Metallization Conference (AMC)",
pages = "313--317",
booktitle = "Advanced Metallization Conference 2008, AMC 2008",
note = "Advanced Metallization Conference 2008, AMC 2008 ; Conference date: 23-09-2008 Through 25-09-2008",
}