Abstract
As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.
Original language | English |
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Pages (from-to) | 542-548 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 447-448 |
DOIs | |
Publication status | Published - 2004 Jan 30 |
Event | Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry