Copper surface protection with a completely enclosed copper structure for a damascene process

T. C. Wang, T. E. Hsieh, Y. L. Wang, Y. L. Wu, Kuang-Yao Lo, C. W. Liu, K. W. Chen

Research output: Contribution to journalConference article

Abstract

As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.

Original languageEnglish
Pages (from-to)542-548
Number of pages7
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

Copper
copper
moisture
Integrated circuit manufacture
corrosion
Moisture
tantalum nitrides
Corrosion
Tantalum
Oxidation
oxidation
barrier layers
Nitrides
Oxides
integrated circuits
adhesion
Adhesion
manufacturing
Gases
wafers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Wang, T. C., Hsieh, T. E., Wang, Y. L., Wu, Y. L., Lo, K-Y., Liu, C. W., & Chen, K. W. (2004). Copper surface protection with a completely enclosed copper structure for a damascene process. Thin Solid Films, 447-448, 542-548. https://doi.org/10.1016/j.tsf.2003.07.025
Wang, T. C. ; Hsieh, T. E. ; Wang, Y. L. ; Wu, Y. L. ; Lo, Kuang-Yao ; Liu, C. W. ; Chen, K. W. / Copper surface protection with a completely enclosed copper structure for a damascene process. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 542-548.
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Copper surface protection with a completely enclosed copper structure for a damascene process. / Wang, T. C.; Hsieh, T. E.; Wang, Y. L.; Wu, Y. L.; Lo, Kuang-Yao; Liu, C. W.; Chen, K. W.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 542-548.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Copper surface protection with a completely enclosed copper structure for a damascene process

AU - Wang, T. C.

AU - Hsieh, T. E.

AU - Wang, Y. L.

AU - Wu, Y. L.

AU - Lo, Kuang-Yao

AU - Liu, C. W.

AU - Chen, K. W.

PY - 2004/1/30

Y1 - 2004/1/30

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AB - As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.

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