Abstract
As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.
| Original language | English |
|---|---|
| Pages (from-to) | 542-548 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 447-448 |
| DOIs | |
| Publication status | Published - 2004 Jan 30 |
| Event | Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Copper surface protection with a completely enclosed copper structure for a damascene process. / Wang, T. C.; Hsieh, T. E.; Wang, Y. L.; Wu, Y. L.; Lo, Kuang-Yao; Liu, C. W.; Chen, K. W.
In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 542-548.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Copper surface protection with a completely enclosed copper structure for a damascene process
AU - Wang, T. C.
AU - Hsieh, T. E.
AU - Wang, Y. L.
AU - Wu, Y. L.
AU - Lo, Kuang-Yao
AU - Liu, C. W.
AU - Chen, K. W.
PY - 2004/1/30
Y1 - 2004/1/30
N2 - As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.
AB - As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.
UR - http://www.scopus.com/inward/record.url?scp=1342281275&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1342281275&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2003.07.025
DO - 10.1016/j.tsf.2003.07.025
M3 - Conference article
AN - SCOPUS:1342281275
VL - 447-448
SP - 542
EP - 548
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -