Correlation between measured minority-carrier lifetime and C(In, Ga)Se 2 device performance

Ingrid L. Repins, Wyatt K. Metzger, Craig L. Perkins, Jian V. Li, Miguel A. Contreras

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


The relationship between lifetime measured by time-resolved photoluminescence on bare Cu(In, Ga)Se2 films and subsequent device performance is examined. Devices and films from both the laboratory and a 40-MW manufacturing line are examined. A correlation between the device voltage and lifetime is demonstrated. The effects of the measured band gap and carrier density are discussed. A method to account for the effects of varying band-gap and carrier density profiles, without requiring computer modeling, is presented. Results are compared with fundamental calculations.

Original languageEnglish
Article number5560786
Pages (from-to)2957-2963
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 2010 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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