Correlation between random telegraph noise and 1/f noise parameters in 28-nm pMOSFETs with tip-shaped SiGe source/drain

Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou Jinn Chang, Yu Min Lin, Kun Hsien Lee, Osbert Cheng

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the Si/SiO 2 interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length (λ) may result in lower 1/f noise level in tip-shaped SiGe S/D devices as compared with that of control devices.

Original languageEnglish
Article number6203555
Pages (from-to)928-930
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number7
DOIs
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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