Correlation between the residual resistance ratio and magnetoresistance in MgB2

X. H. Chen, Y. S. Wang, Y. Y. Xue, R. L. Meng, Y. Q. Wang, C. W. Chu

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56 Citations (Scopus)

Abstract

The resistivity and magnetoresistance in the normal state for bulk and thin-film MgB2 with different nominal compositions have been studied systematically. These samples show different temperature dependences of normal-state resistivity and residual resistance ratios although their superconducting transition temperatures are nearly the same, except for the thin-film sample. The correlation between the residual resistance ratio (RRR) and the power-law dependence of the low-temperature resistivity, p vs Tc, indicates that the electron-phonon interaction is important. It is found that the magnetoresistance (MR) in the normal state scales well with the RRR, a0(MR)∝(RRR)2.2±0.1 at 50 K. This accounts for the large difference in magnetoresistance reported by various groups, due to different defect scatterings in the samples.

Original languageEnglish
Article number024502
Pages (from-to)245021-245025
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number2
DOIs
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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