Correlation between the residual resistance ratio and magnetoresistance in MgB2

X. H. Chen; Y. S. Wang; Y. Y. Xue; R. L. Meng; Y. Q. Wang; C. W. Chu

doi:10.1103/PhysRevB.65.024502

Correlation between the residual resistance ratio and magnetoresistance in MgB₂

X. H. Chen, Y. S. Wang, Y. Y. Xue, R. L. Meng, Y. Q. Wang, C. W. Chu

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Abstract

The resistivity and magnetoresistance in the normal state for bulk and thin-film MgB₂ with different nominal compositions have been studied systematically. These samples show different temperature dependences of normal-state resistivity and residual resistance ratios although their superconducting transition temperatures are nearly the same, except for the thin-film sample. The correlation between the residual resistance ratio (RRR) and the power-law dependence of the low-temperature resistivity, p vs T^c, indicates that the electron-phonon interaction is important. It is found that the magnetoresistance (MR) in the normal state scales well with the RRR, a₀(MR)∝(RRR)^2.2±0.1 at 50 K. This accounts for the large difference in magnetoresistance reported by various groups, due to different defect scatterings in the samples.

Original language	English
Article number	024502
Pages (from-to)	245021-245025
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.65.024502
Publication status	Published - 2002 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.65.024502

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title = "Correlation between the residual resistance ratio and magnetoresistance in MgB2",

abstract = "The resistivity and magnetoresistance in the normal state for bulk and thin-film MgB2 with different nominal compositions have been studied systematically. These samples show different temperature dependences of normal-state resistivity and residual resistance ratios although their superconducting transition temperatures are nearly the same, except for the thin-film sample. The correlation between the residual resistance ratio (RRR) and the power-law dependence of the low-temperature resistivity, p vs Tc, indicates that the electron-phonon interaction is important. It is found that the magnetoresistance (MR) in the normal state scales well with the RRR, a0(MR)∝(RRR)2.2±0.1 at 50 K. This accounts for the large difference in magnetoresistance reported by various groups, due to different defect scatterings in the samples.",

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T1 - Correlation between the residual resistance ratio and magnetoresistance in MgB2

AU - Chen, X. H.

AU - Wang, Y. S.

AU - Xue, Y. Y.

AU - Meng, R. L.

AU - Wang, Y. Q.

AU - Chu, C. W.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The resistivity and magnetoresistance in the normal state for bulk and thin-film MgB2 with different nominal compositions have been studied systematically. These samples show different temperature dependences of normal-state resistivity and residual resistance ratios although their superconducting transition temperatures are nearly the same, except for the thin-film sample. The correlation between the residual resistance ratio (RRR) and the power-law dependence of the low-temperature resistivity, p vs Tc, indicates that the electron-phonon interaction is important. It is found that the magnetoresistance (MR) in the normal state scales well with the RRR, a0(MR)∝(RRR)2.2±0.1 at 50 K. This accounts for the large difference in magnetoresistance reported by various groups, due to different defect scatterings in the samples.

AB - The resistivity and magnetoresistance in the normal state for bulk and thin-film MgB2 with different nominal compositions have been studied systematically. These samples show different temperature dependences of normal-state resistivity and residual resistance ratios although their superconducting transition temperatures are nearly the same, except for the thin-film sample. The correlation between the residual resistance ratio (RRR) and the power-law dependence of the low-temperature resistivity, p vs Tc, indicates that the electron-phonon interaction is important. It is found that the magnetoresistance (MR) in the normal state scales well with the RRR, a0(MR)∝(RRR)2.2±0.1 at 50 K. This accounts for the large difference in magnetoresistance reported by various groups, due to different defect scatterings in the samples.

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Correlation between the residual resistance ratio and magnetoresistance in MgB₂

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