Correlation of growth of pentacene films at various gas ambience conditions to organic field-effect transistor characteristics

Wei-Yang Chou, Y. S. Mai, Horng-Long Cheng, C. Y. Yeh, C. W. Kuo, Fu-Ching Tang, D. Y. Shu, T. R. Yew, Ten-Chin Wen

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Pentacene based thin-film transistors (TFTs) have been fabricated using pentacene films grown under various ambiences, such as N2, H2, Ar, He, and high vacuum, to define correlation of the device performance, in particular mobility properties, to molecular ordering in pentacene films. The field-effect mobility of 0.24 cm2/Vs was obtained from TFTs fabricated under 2 × 10-5 Torr nitrogen ambience, however, the pentacene TFTs fabricated in hydrogen ambience under the same pressure yielded very poor mobility of 0.008 cm2/Vs. Pentacene films deposited by thermal evaporation at increased pressure in nitrogen ambience have a high degree of molecular ordering with larger dendritic grains without any surface modification on silicon oxide dielectric. A clean relation between field-effect mobility and XRD estimated crystallites size was obtained.

Original languageEnglish
Pages (from-to)445-451
Number of pages7
JournalOrganic Electronics
Volume7
Issue number6
DOIs
Publication statusPublished - 2006 Jan 1

Fingerprint

ambience
Organic field effect transistors
Thin film transistors
field effect transistors
Gases
transistors
gases
vacuum
Nitrogen
Thermal evaporation
thin films
Silicon oxides
Crystallites
nitrogen
Surface treatment
high vacuum
silicon oxides
Vacuum
crystallites
Hydrogen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "Pentacene based thin-film transistors (TFTs) have been fabricated using pentacene films grown under various ambiences, such as N2, H2, Ar, He, and high vacuum, to define correlation of the device performance, in particular mobility properties, to molecular ordering in pentacene films. The field-effect mobility of 0.24 cm2/Vs was obtained from TFTs fabricated under 2 × 10-5 Torr nitrogen ambience, however, the pentacene TFTs fabricated in hydrogen ambience under the same pressure yielded very poor mobility of 0.008 cm2/Vs. Pentacene films deposited by thermal evaporation at increased pressure in nitrogen ambience have a high degree of molecular ordering with larger dendritic grains without any surface modification on silicon oxide dielectric. A clean relation between field-effect mobility and XRD estimated crystallites size was obtained.",
author = "Wei-Yang Chou and Mai, {Y. S.} and Horng-Long Cheng and Yeh, {C. Y.} and Kuo, {C. W.} and Fu-Ching Tang and Shu, {D. Y.} and Yew, {T. R.} and Ten-Chin Wen",
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Correlation of growth of pentacene films at various gas ambience conditions to organic field-effect transistor characteristics. / Chou, Wei-Yang; Mai, Y. S.; Cheng, Horng-Long; Yeh, C. Y.; Kuo, C. W.; Tang, Fu-Ching; Shu, D. Y.; Yew, T. R.; Wen, Ten-Chin.

In: Organic Electronics, Vol. 7, No. 6, 01.01.2006, p. 445-451.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Chou, Wei-Yang

AU - Mai, Y. S.

AU - Cheng, Horng-Long

AU - Yeh, C. Y.

AU - Kuo, C. W.

AU - Tang, Fu-Ching

AU - Shu, D. Y.

AU - Yew, T. R.

AU - Wen, Ten-Chin

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AB - Pentacene based thin-film transistors (TFTs) have been fabricated using pentacene films grown under various ambiences, such as N2, H2, Ar, He, and high vacuum, to define correlation of the device performance, in particular mobility properties, to molecular ordering in pentacene films. The field-effect mobility of 0.24 cm2/Vs was obtained from TFTs fabricated under 2 × 10-5 Torr nitrogen ambience, however, the pentacene TFTs fabricated in hydrogen ambience under the same pressure yielded very poor mobility of 0.008 cm2/Vs. Pentacene films deposited by thermal evaporation at increased pressure in nitrogen ambience have a high degree of molecular ordering with larger dendritic grains without any surface modification on silicon oxide dielectric. A clean relation between field-effect mobility and XRD estimated crystallites size was obtained.

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