Abstract
Pentacene based thin-film transistors (TFTs) have been fabricated using pentacene films grown under various ambiences, such as N2, H2, Ar, He, and high vacuum, to define correlation of the device performance, in particular mobility properties, to molecular ordering in pentacene films. The field-effect mobility of 0.24 cm2/Vs was obtained from TFTs fabricated under 2 × 10-5 Torr nitrogen ambience, however, the pentacene TFTs fabricated in hydrogen ambience under the same pressure yielded very poor mobility of 0.008 cm2/Vs. Pentacene films deposited by thermal evaporation at increased pressure in nitrogen ambience have a high degree of molecular ordering with larger dendritic grains without any surface modification on silicon oxide dielectric. A clean relation between field-effect mobility and XRD estimated crystallites size was obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 445-451 |
| Number of pages | 7 |
| Journal | Organic Electronics |
| Volume | 7 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2006 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
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Correlation of growth of pentacene films at various gas ambience conditions to organic field-effect transistor characteristics. / Chou, Wei-Yang; Mai, Y. S.; Cheng, Horng-Long; Yeh, C. Y.; Kuo, C. W.; Tang, Fu-Ching; Shu, D. Y.; Yew, T. R.; Wen, Ten-Chin.
In: Organic Electronics, Vol. 7, No. 6, 01.01.2006, p. 445-451.Research output: Contribution to journal › Article
TY - JOUR
T1 - Correlation of growth of pentacene films at various gas ambience conditions to organic field-effect transistor characteristics
AU - Chou, Wei-Yang
AU - Mai, Y. S.
AU - Cheng, Horng-Long
AU - Yeh, C. Y.
AU - Kuo, C. W.
AU - Tang, Fu-Ching
AU - Shu, D. Y.
AU - Yew, T. R.
AU - Wen, Ten-Chin
PY - 2006/1/1
Y1 - 2006/1/1
N2 - Pentacene based thin-film transistors (TFTs) have been fabricated using pentacene films grown under various ambiences, such as N2, H2, Ar, He, and high vacuum, to define correlation of the device performance, in particular mobility properties, to molecular ordering in pentacene films. The field-effect mobility of 0.24 cm2/Vs was obtained from TFTs fabricated under 2 × 10-5 Torr nitrogen ambience, however, the pentacene TFTs fabricated in hydrogen ambience under the same pressure yielded very poor mobility of 0.008 cm2/Vs. Pentacene films deposited by thermal evaporation at increased pressure in nitrogen ambience have a high degree of molecular ordering with larger dendritic grains without any surface modification on silicon oxide dielectric. A clean relation between field-effect mobility and XRD estimated crystallites size was obtained.
AB - Pentacene based thin-film transistors (TFTs) have been fabricated using pentacene films grown under various ambiences, such as N2, H2, Ar, He, and high vacuum, to define correlation of the device performance, in particular mobility properties, to molecular ordering in pentacene films. The field-effect mobility of 0.24 cm2/Vs was obtained from TFTs fabricated under 2 × 10-5 Torr nitrogen ambience, however, the pentacene TFTs fabricated in hydrogen ambience under the same pressure yielded very poor mobility of 0.008 cm2/Vs. Pentacene films deposited by thermal evaporation at increased pressure in nitrogen ambience have a high degree of molecular ordering with larger dendritic grains without any surface modification on silicon oxide dielectric. A clean relation between field-effect mobility and XRD estimated crystallites size was obtained.
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U2 - 10.1016/j.orgel.2006.05.007
DO - 10.1016/j.orgel.2006.05.007
M3 - Article
AN - SCOPUS:33751018888
VL - 7
SP - 445
EP - 451
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 6
ER -