The plasma enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO2) thin films from SiH4 and N2O has been executed with and without CO2 laser illumination. The quality of the film processed under a 10.6 μm CO2 laser was close to that of a film grown when the substrate was heated to 200°C. Since the temperature of the film substrate under CO2 laser illumination was only about 55°C, this method should be helpful in processes where a low thermal budget is required. CO2-laser-assisted PECVD (termed LAPECVD) with a substrate heated to 200°C resulted in a SiO2 thin film with excellent I-V characteristics and surface morphology, as well as a higher refractive index and lower etching rate in BOE solution. Application of this thin film should be explored.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - 2001 May|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)