Coulomb attractive random telegraph signal in a single-walled carbon nanotube

Fei Liu, Mingqiang Bao, Kang L. Wang, Daihua Zhang, Chongwu Zhou

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The gate dependence of a Coulomb attractive random telegraph signal is observed in a single-walled carbon nanotube field effect transistor for temperatures varying from 0.32 to 24 K. The mechanism of the Coulomb attractive random telegraph signal is attributed to the carrier tunneling between the carbon nanotube and the Coulomb attractive defect. The random telegraph signal is also studied under magnetic field over an entire gate bias range and a wide temperature range. The Coulomb attractive random telegraph signal shows weak magnetic dependence, which may be due to the broadening of the Zeeman levels of the defect in the p -type carbon nanotube field effect transistor.

Original languageEnglish
Article number035438
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number3
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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