TY - JOUR
T1 - Coupled double-row formation in a quasi-1D wire
AU - Smith, L. W.
AU - Hew, W. K.
AU - Thomas, K. J.
AU - Pepper, M.
AU - Farrer, I.
AU - Anderson, D.
AU - Jones, G. A.C.
AU - Ritchie, D. A.
N1 - Funding Information:
This work was supported by the Engineering and Physical Sciences Research Council. W.K.H. acknowledges support from Toshiba. K.J.T. acknowledges support from WCU (World Class University) program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (R32-2008-000-10204-0).
PY - 2010/2
Y1 - 2010/2
N2 - We investigate one-dimensional (1D) quantum wires in the weak confinement regime, where, at certain densities, the 1D system of electrons bifurcates into two rows. We show that the two rows are coupled, forming bonding and antibonding states, and that the coupling persists in magnetic fields from 0 to 16 T. In order for a double row to form, the Coulomb interactions in the channel must overcome the confining potential, which can be achieved by tuning the density and confinement. Using a split-gate device with a top gate and back gate, we observe a transition from single-row to double-row behaviour in the weak confinement regime. We further probe the characteristics of the coupled double row regime with dc source-drain bias measurements.
AB - We investigate one-dimensional (1D) quantum wires in the weak confinement regime, where, at certain densities, the 1D system of electrons bifurcates into two rows. We show that the two rows are coupled, forming bonding and antibonding states, and that the coupling persists in magnetic fields from 0 to 16 T. In order for a double row to form, the Coulomb interactions in the channel must overcome the confining potential, which can be achieved by tuning the density and confinement. Using a split-gate device with a top gate and back gate, we observe a transition from single-row to double-row behaviour in the weak confinement regime. We further probe the characteristics of the coupled double row regime with dc source-drain bias measurements.
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U2 - 10.1016/j.physe.2009.11.001
DO - 10.1016/j.physe.2009.11.001
M3 - Article
AN - SCOPUS:76949098035
SN - 1386-9477
VL - 42
SP - 1114
EP - 1117
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 4
ER -