CoW alloy as multi-function diffusion barrier material for next-generation Cu metallization

Yin Hsien Su, Jia Nan Shih, Yu Sheng Wang, Wei Hsiang Tseng, Wei Hsiang Liao, Chun Yi Hung, Wen-Shi Lee, Ying Lang Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, CoW alloy co-sputtered with various conditions was investigated as a Cu diffusion barrier to replace the conventional Cu seed/liner/barrier structure. By fabricating Cu/CoW/Si stacks, we found that under certain Co/W ratio, CoW layers showed similar wetting ability with Ta and can avoid Cu diffusion up to 570 °C for 56 min. Furthermore, Cu was found capable to be directly electroplated on CoW layers. As a result, a single layer of CoW alloy which demonstrates electroplating, wetting and barrier ability simultaneously could become a promising material for next-generation Cu metallization.

Original languageEnglish
Title of host publication4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479942084
DOIs
Publication statusPublished - 2015 Jun 23
Event4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 - Taipei, Taiwan
Duration: 2015 May 42015 May 6

Publication series

Name4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015

Other

Other4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
CountryTaiwan
CityTaipei
Period15-05-0415-05-06

Fingerprint

Diffusion barriers
Metallizing
Wetting
Electroplating
Seed

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Su, Y. H., Shih, J. N., Wang, Y. S., Tseng, W. H., Liao, W. H., Hung, C. Y., ... Wang, Y. L. (2015). CoW alloy as multi-function diffusion barrier material for next-generation Cu metallization. In 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 [7132035] (4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2015.7132035
Su, Yin Hsien ; Shih, Jia Nan ; Wang, Yu Sheng ; Tseng, Wei Hsiang ; Liao, Wei Hsiang ; Hung, Chun Yi ; Lee, Wen-Shi ; Wang, Ying Lang. / CoW alloy as multi-function diffusion barrier material for next-generation Cu metallization. 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015).
@inproceedings{965779d90fef4ee8aaa9e17de5eca82d,
title = "CoW alloy as multi-function diffusion barrier material for next-generation Cu metallization",
abstract = "In this study, CoW alloy co-sputtered with various conditions was investigated as a Cu diffusion barrier to replace the conventional Cu seed/liner/barrier structure. By fabricating Cu/CoW/Si stacks, we found that under certain Co/W ratio, CoW layers showed similar wetting ability with Ta and can avoid Cu diffusion up to 570 °C for 56 min. Furthermore, Cu was found capable to be directly electroplated on CoW layers. As a result, a single layer of CoW alloy which demonstrates electroplating, wetting and barrier ability simultaneously could become a promising material for next-generation Cu metallization.",
author = "Su, {Yin Hsien} and Shih, {Jia Nan} and Wang, {Yu Sheng} and Tseng, {Wei Hsiang} and Liao, {Wei Hsiang} and Hung, {Chun Yi} and Wen-Shi Lee and Wang, {Ying Lang}",
year = "2015",
month = "6",
day = "23",
doi = "10.1109/ISNE.2015.7132035",
language = "English",
series = "4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015",
address = "United States",

}

Su, YH, Shih, JN, Wang, YS, Tseng, WH, Liao, WH, Hung, CY, Lee, W-S & Wang, YL 2015, CoW alloy as multi-function diffusion barrier material for next-generation Cu metallization. in 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015., 7132035, 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015, Institute of Electrical and Electronics Engineers Inc., 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015, Taipei, Taiwan, 15-05-04. https://doi.org/10.1109/ISNE.2015.7132035

CoW alloy as multi-function diffusion barrier material for next-generation Cu metallization. / Su, Yin Hsien; Shih, Jia Nan; Wang, Yu Sheng; Tseng, Wei Hsiang; Liao, Wei Hsiang; Hung, Chun Yi; Lee, Wen-Shi; Wang, Ying Lang.

4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7132035 (4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - CoW alloy as multi-function diffusion barrier material for next-generation Cu metallization

AU - Su, Yin Hsien

AU - Shih, Jia Nan

AU - Wang, Yu Sheng

AU - Tseng, Wei Hsiang

AU - Liao, Wei Hsiang

AU - Hung, Chun Yi

AU - Lee, Wen-Shi

AU - Wang, Ying Lang

PY - 2015/6/23

Y1 - 2015/6/23

N2 - In this study, CoW alloy co-sputtered with various conditions was investigated as a Cu diffusion barrier to replace the conventional Cu seed/liner/barrier structure. By fabricating Cu/CoW/Si stacks, we found that under certain Co/W ratio, CoW layers showed similar wetting ability with Ta and can avoid Cu diffusion up to 570 °C for 56 min. Furthermore, Cu was found capable to be directly electroplated on CoW layers. As a result, a single layer of CoW alloy which demonstrates electroplating, wetting and barrier ability simultaneously could become a promising material for next-generation Cu metallization.

AB - In this study, CoW alloy co-sputtered with various conditions was investigated as a Cu diffusion barrier to replace the conventional Cu seed/liner/barrier structure. By fabricating Cu/CoW/Si stacks, we found that under certain Co/W ratio, CoW layers showed similar wetting ability with Ta and can avoid Cu diffusion up to 570 °C for 56 min. Furthermore, Cu was found capable to be directly electroplated on CoW layers. As a result, a single layer of CoW alloy which demonstrates electroplating, wetting and barrier ability simultaneously could become a promising material for next-generation Cu metallization.

UR - http://www.scopus.com/inward/record.url?scp=84939454358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939454358&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2015.7132035

DO - 10.1109/ISNE.2015.7132035

M3 - Conference contribution

T3 - 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015

BT - 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Su YH, Shih JN, Wang YS, Tseng WH, Liao WH, Hung CY et al. CoW alloy as multi-function diffusion barrier material for next-generation Cu metallization. In 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7132035. (4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015). https://doi.org/10.1109/ISNE.2015.7132035