We report the fabrication of low-cost, high-brightness, and crack-free blue GaN light-emitting diodes on Si(111) substrates with AlGaN initial buffer and two low-temperature (LT) AlN interlayers. With 20 mA current injection, it was found that the LED forward voltages were 3.5 and 4.8 V for the horizontal and vertical LEDs, respectively. It was also found that output power of the blue InGaNGaN horizontal blue LED prepared on Si substrate was about 1.5 mW.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry