Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers

Y. P. Hsu, S. J. Chang, W. S. Chen, J. K. Sheu, J. Y. Chu, C. T. Kuo

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10 Citations (Scopus)

Abstract

We report the fabrication of low-cost, high-brightness, and crack-free blue GaN light-emitting diodes on Si(111) substrates with AlGaN initial buffer and two low-temperature (LT) AlN interlayers. With 20 mA current injection, it was found that the LED forward voltages were 3.5 and 4.8 V for the horizontal and vertical LEDs, respectively. It was also found that output power of the blue InGaNGaN horizontal blue LED prepared on Si substrate was about 1.5 mW.

Original languageEnglish
Pages (from-to)H191-H193
JournalJournal of the Electrochemical Society
Volume154
Issue number3
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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