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Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers
Y. P. Hsu, S. J. Chang, W. S. Chen, J. K. Sheu, J. Y. Chu, C. T. Kuo
Research output: Contribution to journal › Article › peer-review
10
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(Scopus)