Critical dimension atomic forcemicroscopy for Sub-50-Nm microelectronics technology nodes

Hao Chih Liu, Gregory A. Dahlen, Jason R. Osborne

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The chapter discusses recent developments within critical dimension atomic force microscopy (CD AFM) and its application to nanostructures having lateral dimensions of 50 nm and less. Challenges in this measurement range call for research and development in probe design, tip-sample interaction control, tip shape characterization, and image reconstruction algorithms. Design considerations and performance improvements are reviewed throughout the chapter and metrological measurement results are presented with emphasis on industrial applications. CD AFM uses novel probes and advanced scan control algorithms to acquire metrological measurements that are (1) NIST-traceable with subnanometer precision and nanometer-level uncertainty, (2) capable of imaging vertical sidewalls and undercut features, (3) direct, nondestructive and fast relative to existing reference metrology systems (RMS), and (4) multiple cross-sectional, with resolution comparable to that of transmission electron microscopy (TEM). Recently, these attributes have enhanced the role of CD AFM as the RMS for other metrology systems.

Original languageEnglish
Pages (from-to)31-75
Number of pages45
JournalNanoScience and Technology
Publication statusPublished - 2008 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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