Critical dimension atomic forcemicroscopy for Sub-50-Nm microelectronics technology nodes

Bernard Haochih Liu, Gregory A. Dahlen, Jason R. Osborne

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The chapter discusses recent developments within critical dimension atomic force microscopy (CD AFM) and its application to nanostructures having lateral dimensions of 50 nm and less. Challenges in this measurement range call for research and development in probe design, tip-sample interaction control, tip shape characterization, and image reconstruction algorithms. Design considerations and performance improvements are reviewed throughout the chapter and metrological measurement results are presented with emphasis on industrial applications. CD AFM uses novel probes and advanced scan control algorithms to acquire metrological measurements that are (1) NIST-traceable with subnanometer precision and nanometer-level uncertainty, (2) capable of imaging vertical sidewalls and undercut features, (3) direct, nondestructive and fast relative to existing reference metrology systems (RMS), and (4) multiple cross-sectional, with resolution comparable to that of transmission electron microscopy (TEM). Recently, these attributes have enhanced the role of CD AFM as the RMS for other metrology systems.

Original languageEnglish
Pages (from-to)31-75
Number of pages45
JournalNanoScience and Technology
Publication statusPublished - 2008 Jan 1

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microelectronics
Microelectronics
metrology
atomic force microscopy
Atomic force microscopy
probes
rangefinding
image reconstruction
research and development
Image reconstruction
transmission electron microscopy
Industrial applications
Nanostructures
Transmission electron microscopy
Imaging techniques
interactions

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{8e60559eb2dd446d84eb775374e0f070,
title = "Critical dimension atomic forcemicroscopy for Sub-50-Nm microelectronics technology nodes",
abstract = "The chapter discusses recent developments within critical dimension atomic force microscopy (CD AFM) and its application to nanostructures having lateral dimensions of 50 nm and less. Challenges in this measurement range call for research and development in probe design, tip-sample interaction control, tip shape characterization, and image reconstruction algorithms. Design considerations and performance improvements are reviewed throughout the chapter and metrological measurement results are presented with emphasis on industrial applications. CD AFM uses novel probes and advanced scan control algorithms to acquire metrological measurements that are (1) NIST-traceable with subnanometer precision and nanometer-level uncertainty, (2) capable of imaging vertical sidewalls and undercut features, (3) direct, nondestructive and fast relative to existing reference metrology systems (RMS), and (4) multiple cross-sectional, with resolution comparable to that of transmission electron microscopy (TEM). Recently, these attributes have enhanced the role of CD AFM as the RMS for other metrology systems.",
author = "Liu, {Bernard Haochih} and Dahlen, {Gregory A.} and Osborne, {Jason R.}",
year = "2008",
month = "1",
day = "1",
language = "English",
pages = "31--75",
journal = "NanoScience and Technology",
issn = "1434-4904",
publisher = "Springer Verlag",

}

Critical dimension atomic forcemicroscopy for Sub-50-Nm microelectronics technology nodes. / Liu, Bernard Haochih; Dahlen, Gregory A.; Osborne, Jason R.

In: NanoScience and Technology, 01.01.2008, p. 31-75.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Critical dimension atomic forcemicroscopy for Sub-50-Nm microelectronics technology nodes

AU - Liu, Bernard Haochih

AU - Dahlen, Gregory A.

AU - Osborne, Jason R.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The chapter discusses recent developments within critical dimension atomic force microscopy (CD AFM) and its application to nanostructures having lateral dimensions of 50 nm and less. Challenges in this measurement range call for research and development in probe design, tip-sample interaction control, tip shape characterization, and image reconstruction algorithms. Design considerations and performance improvements are reviewed throughout the chapter and metrological measurement results are presented with emphasis on industrial applications. CD AFM uses novel probes and advanced scan control algorithms to acquire metrological measurements that are (1) NIST-traceable with subnanometer precision and nanometer-level uncertainty, (2) capable of imaging vertical sidewalls and undercut features, (3) direct, nondestructive and fast relative to existing reference metrology systems (RMS), and (4) multiple cross-sectional, with resolution comparable to that of transmission electron microscopy (TEM). Recently, these attributes have enhanced the role of CD AFM as the RMS for other metrology systems.

AB - The chapter discusses recent developments within critical dimension atomic force microscopy (CD AFM) and its application to nanostructures having lateral dimensions of 50 nm and less. Challenges in this measurement range call for research and development in probe design, tip-sample interaction control, tip shape characterization, and image reconstruction algorithms. Design considerations and performance improvements are reviewed throughout the chapter and metrological measurement results are presented with emphasis on industrial applications. CD AFM uses novel probes and advanced scan control algorithms to acquire metrological measurements that are (1) NIST-traceable with subnanometer precision and nanometer-level uncertainty, (2) capable of imaging vertical sidewalls and undercut features, (3) direct, nondestructive and fast relative to existing reference metrology systems (RMS), and (4) multiple cross-sectional, with resolution comparable to that of transmission electron microscopy (TEM). Recently, these attributes have enhanced the role of CD AFM as the RMS for other metrology systems.

UR - http://www.scopus.com/inward/record.url?scp=85016192934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016192934&partnerID=8YFLogxK

M3 - Article

SP - 31

EP - 75

JO - NanoScience and Technology

JF - NanoScience and Technology

SN - 1434-4904

ER -