Critical thickness of self-assembled Ge quantum dot superlattices

J. L. Liu, J. Wan, K. L. Wang, D. P. Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In the recent years, there have been considerable attempts to study self-assembled multi-layered Ge quantum dot superlattices for the interest in their novel optoelectronic and thermoelectric properties as well as potential device applications. An interesting feature observed in the multi-layered dot structures was that the dots in the upper layers tended to grow on top of the buried ones, which is attributed to preferential nucleation due to an inhomogeneous strain field induced by buried dots. In this presentation, we show dot evolution characteristics in thick Ge quantum dot superlattices. The study provides strong experimental evidence of the breakdown of the vertical correlation and the growth mode change before and after the reach of the effective critical thickness of superlattices.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages351-352
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 2002 Sep 152002 Sep 20

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period02-09-1502-09-20

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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