Critical thickness of self-assembled Ge quantum dot superlattices

J. L. Liu, J. Wan, K. L. Wang, D. P. Yu

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

We present the formation of dislocations in thick Ge quantum dot superlattices and the effect of these dislocations on Ge quantum dots. Photoluminescence, TEM and AFM were used to characterize the Ge quantum dot superlattices. For Ge (1.5 nm)/Si (20 nm) superlattices, it was found that the critical thickness was reached when the film thickness was around 0.5 μm. The threading dislocations were formed in the film afterwards and induced circular holes on the surface. Ge quantum dots tended to nucleate at the edge of the holes. The limited critical thickness for Ge quantum dot superlattices is a limitation for applications, such as optoelectronics and thermoelectronics.

Original languageEnglish
Pages (from-to)666-669
Number of pages4
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - 2003 Apr
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 2002 Sep 152002 Sep 20

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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