Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InNGaN heterojunction: Measurement of "intrinsic" band lineup

Chung Lin Wu, Hong Mao Lee, Cheng Tai Kuo, Chia Hao Chen, Shangjr Gwo

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

A method for studying heterojunction band lineups on the submicrometer scale is demonstrated by using synchrotron-radiation photoelectron microscopy and spectroscopy. In particular, an in situ sample cleavage technique is adopted here to reveal the cross-sectional, nonpolar a -plane face of InNGaN heterojunction grown on Si(111) along the polar -c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface. The "intrinsic" valence band offset at the cleaved InNGaN heterojunction has been determined to be 0.78 eV. Additionally, using known material parameters, the values of InNGaN conduction band offset and InN electron affinity are also estimated.

Original languageEnglish
Article number162106
JournalApplied Physics Letters
Volume92
Issue number16
DOIs
Publication statusPublished - 2008 May 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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