Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InNGaN heterojunction: Measurement of "intrinsic" band lineup

Chung Lin Wu; Hong Mao Lee; Cheng Tai Kuo; Chia Hao Chen; Shangjr Gwo

doi:10.1063/1.2913204

Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InNGaN heterojunction: Measurement of "intrinsic" band lineup

Chung Lin Wu, Hong Mao Lee, Cheng Tai Kuo, Chia Hao Chen, Shangjr Gwo

Department of Physics

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

A method for studying heterojunction band lineups on the submicrometer scale is demonstrated by using synchrotron-radiation photoelectron microscopy and spectroscopy. In particular, an in situ sample cleavage technique is adopted here to reveal the cross-sectional, nonpolar a -plane face of InNGaN heterojunction grown on Si(111) along the polar -c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface. The "intrinsic" valence band offset at the cleaved InNGaN heterojunction has been determined to be 0.78 eV. Additionally, using known material parameters, the values of InNGaN conduction band offset and InN electron affinity are also estimated.

Original language	English
Article number	162106
Journal	Applied Physics Letters
Volume	92
Issue number	16
DOIs	https://doi.org/10.1063/1.2913204
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2913204

Cite this

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title = "Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InNGaN heterojunction: Measurement of {"}intrinsic{"} band lineup",

abstract = "A method for studying heterojunction band lineups on the submicrometer scale is demonstrated by using synchrotron-radiation photoelectron microscopy and spectroscopy. In particular, an in situ sample cleavage technique is adopted here to reveal the cross-sectional, nonpolar a -plane face of InNGaN heterojunction grown on Si(111) along the polar -c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface. The {"}intrinsic{"} valence band offset at the cleaved InNGaN heterojunction has been determined to be 0.78 eV. Additionally, using known material parameters, the values of InNGaN conduction band offset and InN electron affinity are also estimated.",

author = "Wu, {Chung Lin} and Lee, {Hong Mao} and Kuo, {Cheng Tai} and Chen, {Chia Hao} and Shangjr Gwo",

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T1 - Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InNGaN heterojunction

T2 - Measurement of "intrinsic" band lineup

AU - Wu, Chung Lin

AU - Lee, Hong Mao

AU - Kuo, Cheng Tai

AU - Chen, Chia Hao

AU - Gwo, Shangjr

N1 - Funding Information: This work was supported in part by the National Science Council Taiwan (NSC).

PY - 2008

Y1 - 2008

N2 - A method for studying heterojunction band lineups on the submicrometer scale is demonstrated by using synchrotron-radiation photoelectron microscopy and spectroscopy. In particular, an in situ sample cleavage technique is adopted here to reveal the cross-sectional, nonpolar a -plane face of InNGaN heterojunction grown on Si(111) along the polar -c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface. The "intrinsic" valence band offset at the cleaved InNGaN heterojunction has been determined to be 0.78 eV. Additionally, using known material parameters, the values of InNGaN conduction band offset and InN electron affinity are also estimated.

AB - A method for studying heterojunction band lineups on the submicrometer scale is demonstrated by using synchrotron-radiation photoelectron microscopy and spectroscopy. In particular, an in situ sample cleavage technique is adopted here to reveal the cross-sectional, nonpolar a -plane face of InNGaN heterojunction grown on Si(111) along the polar -c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface. The "intrinsic" valence band offset at the cleaved InNGaN heterojunction has been determined to be 0.78 eV. Additionally, using known material parameters, the values of InNGaN conduction band offset and InN electron affinity are also estimated.

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Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InNGaN heterojunction: Measurement of "intrinsic" band lineup

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