Cross-sectional transmission electron microscopy of interface structure of β-FeSi₂/Si(100) prepared by ion beam sputter deposition

Engineering & Materials Science

• Sputter deposition 100%
• Ion beams 86%
• Etching 65%
• Transmission electron microscopy 62%
• Substrates 36%
• Hot Temperature 16%
• Silicon 13%
• Radiation damage 13%
• Stacking faults 12%
• Epitaxial growth 12%
• Atoms 9%
• Annealing 8%
• Crystals 8%
• Electron microscopes 8%
• Iron 7%
• Defects 5%

Physics & Astronomy

• ion beams 47%
• etching 46%
• transmission electron microscopy 39%
• pretreatment 19%
• silicon 9%
• radiation damage 8%
• crystal defects 8%
• electron microscopes 6%
• disorders 6%
• iron 6%
• annealing 5%
• defects 4%
• atoms 4%
• crystals 4%