Crystal growth and characterisation of KTiOAsO4

H. G. Gallagher; X. Qi; J. N. Sherwood; R. M. Vrcelj

doi:10.1016/S0022-0248(01)01015-6

Crystal growth and characterisation of KTiOAsO₄

H. G. Gallagher
, X. Qi
, J. N. Sherwood
, R. M. Vrcelj

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Crystals of potassium titanyl arsenate were prepared by top seeded solution growth from a tungstate flux. X-ray topography revealed extensive growth banding in several sectors associated with temperature induced fluctuations in composition and impurity content. This was confirmed to some extent by energy dispersive X-ray analysis measurements which revealed significant levels of tungsten incorporation from the flux and higher levels of iron impurity from the starting materials. The overall dislocation density in (011) and (001) growth sectors was determined to be <10²cm^-2. X-ray diffraction rocking curve measurements confirmed a low average strain across the crystal.

Original language	English
Pages (from-to)	303-308
Number of pages	6
Journal	Journal of Crystal Growth
Volume	224
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(01)01015-6
Publication status	Published - 2001 Apr

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(01)01015-6

Cite this

@article{2816050ac5814e70b0e642050d028570,

title = "Crystal growth and characterisation of KTiOAsO4",

abstract = "Crystals of potassium titanyl arsenate were prepared by top seeded solution growth from a tungstate flux. X-ray topography revealed extensive growth banding in several sectors associated with temperature induced fluctuations in composition and impurity content. This was confirmed to some extent by energy dispersive X-ray analysis measurements which revealed significant levels of tungsten incorporation from the flux and higher levels of iron impurity from the starting materials. The overall dislocation density in (011) and (001) growth sectors was determined to be <102cm-2. X-ray diffraction rocking curve measurements confirmed a low average strain across the crystal.",

author = "Gallagher, \{H. G.\} and X. Qi and Sherwood, \{J. N.\} and Vrcelj, \{R. M.\}",

year = "2001",

month = apr,

doi = "10.1016/S0022-0248(01)01015-6",

language = "English",

volume = "224",

pages = "303--308",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "3-4",

}

TY - JOUR

T1 - Crystal growth and characterisation of KTiOAsO4

AU - Gallagher, H. G.

AU - Qi, X.

AU - Sherwood, J. N.

AU - Vrcelj, R. M.

PY - 2001/4

Y1 - 2001/4

N2 - Crystals of potassium titanyl arsenate were prepared by top seeded solution growth from a tungstate flux. X-ray topography revealed extensive growth banding in several sectors associated with temperature induced fluctuations in composition and impurity content. This was confirmed to some extent by energy dispersive X-ray analysis measurements which revealed significant levels of tungsten incorporation from the flux and higher levels of iron impurity from the starting materials. The overall dislocation density in (011) and (001) growth sectors was determined to be <102cm-2. X-ray diffraction rocking curve measurements confirmed a low average strain across the crystal.

AB - Crystals of potassium titanyl arsenate were prepared by top seeded solution growth from a tungstate flux. X-ray topography revealed extensive growth banding in several sectors associated with temperature induced fluctuations in composition and impurity content. This was confirmed to some extent by energy dispersive X-ray analysis measurements which revealed significant levels of tungsten incorporation from the flux and higher levels of iron impurity from the starting materials. The overall dislocation density in (011) and (001) growth sectors was determined to be <102cm-2. X-ray diffraction rocking curve measurements confirmed a low average strain across the crystal.

UR - https://www.scopus.com/pages/publications/0035310172

UR - https://www.scopus.com/pages/publications/0035310172#tab=citedBy

U2 - 10.1016/S0022-0248(01)01015-6

DO - 10.1016/S0022-0248(01)01015-6

M3 - Article

AN - SCOPUS:0035310172

SN - 0022-0248

VL - 224

SP - 303

EP - 308

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Crystal growth and characterisation of KTiOAsO₄

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this