Crystal growth of SrTiO3 films on H-terminated Si(1 1 1) with SrO buffer layers

Y. MacHida; H. Asaoka; H. Yamamoto; S. Shamoto

doi:10.1016/j.susc.2005.11.024

Crystal growth of SrTiO₃ films on H-terminated Si(1 1 1) with SrO buffer layers

Y. MacHida
, H. Asaoka
, H. Yamamoto
, S. Shamoto

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Growth of epitaxial SrTiO₃ (STO) films has been examined on H-terminated Si(1 1 1) with SrO buffer layers. The epitaxial SrO buffer layers have reduced stress on H-terminated Si substrates. On the SrO buffer layers, the STO films grow epitaxially with triple domains at low temperature. Each STO domain has equivalent epitaxial relationship to SrO buffer layers, STO(1 1 0)∥SrO(1 1 1) and STO[001]∥SrO[11̄0].

Original language	English
Pages (from-to)	724-728
Number of pages	5
Journal	Surface Science
Volume	600
Issue number	3
DOIs	https://doi.org/10.1016/j.susc.2005.11.024
Publication status	Published - 2006 Feb 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.susc.2005.11.024

Cite this

@article{7020c554eabe4a4aa9dea93aefebcf38,

title = "Crystal growth of SrTiO3 films on H-terminated Si(1 1 1) with SrO buffer layers",

abstract = "Growth of epitaxial SrTiO3 (STO) films has been examined on H-terminated Si(1 1 1) with SrO buffer layers. The epitaxial SrO buffer layers have reduced stress on H-terminated Si substrates. On the SrO buffer layers, the STO films grow epitaxially with triple domains at low temperature. Each STO domain has equivalent epitaxial relationship to SrO buffer layers, STO(1 1 0)∥SrO(1 1 1) and STO[001]∥SrO[1{\=1}0].",

author = "Y. MacHida and H. Asaoka and H. Yamamoto and S. Shamoto",

year = "2006",

month = feb,

day = "1",

doi = "10.1016/j.susc.2005.11.024",

language = "English",

volume = "600",

pages = "724--728",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier BV",

number = "3",

}

TY - JOUR

T1 - Crystal growth of SrTiO3 films on H-terminated Si(1 1 1) with SrO buffer layers

AU - MacHida, Y.

AU - Asaoka, H.

AU - Yamamoto, H.

AU - Shamoto, S.

PY - 2006/2/1

Y1 - 2006/2/1

N2 - Growth of epitaxial SrTiO3 (STO) films has been examined on H-terminated Si(1 1 1) with SrO buffer layers. The epitaxial SrO buffer layers have reduced stress on H-terminated Si substrates. On the SrO buffer layers, the STO films grow epitaxially with triple domains at low temperature. Each STO domain has equivalent epitaxial relationship to SrO buffer layers, STO(1 1 0)∥SrO(1 1 1) and STO[001]∥SrO[11̄0].

AB - Growth of epitaxial SrTiO3 (STO) films has been examined on H-terminated Si(1 1 1) with SrO buffer layers. The epitaxial SrO buffer layers have reduced stress on H-terminated Si substrates. On the SrO buffer layers, the STO films grow epitaxially with triple domains at low temperature. Each STO domain has equivalent epitaxial relationship to SrO buffer layers, STO(1 1 0)∥SrO(1 1 1) and STO[001]∥SrO[11̄0].

UR - https://www.scopus.com/pages/publications/31644440709

UR - https://www.scopus.com/pages/publications/31644440709#tab=citedBy

U2 - 10.1016/j.susc.2005.11.024

DO - 10.1016/j.susc.2005.11.024

M3 - Article

AN - SCOPUS:31644440709

SN - 0039-6028

VL - 600

SP - 724

EP - 728

JO - Surface Science

JF - Surface Science

IS - 3

ER -

Crystal growth of SrTiO₃ films on H-terminated Si(1 1 1) with SrO buffer layers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this