Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

Chii Chang Chen, Kun Long Hsieh, Jinn-Kong Sheu, Gou Chung Chi, Ming Juinn Jou, Chih Hao Lee, Ming Zhe Lin

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The net modal gain of the InGaN/GaN multiple quantum well has been measured by the variable excitation stripe length method for an optically pumped cavity along each crystal orientation on the (0001) plane. These results demonstrated the theoretical prediction of the fact that the maximum optical gain can be obtained at a [1210]-oriented edge-emitting laser cavity, which has been reported in the literature. "Crystal orientation" is confirmed to be a related parameter to the optical gain for a GaN-based strained structure.

Original languageEnglish
Pages (from-to)1477-1479
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number10
DOIs
Publication statusPublished - 2001 Sep 3

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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