TY - JOUR
T1 - Crystal orientation of epitaxial oxide film on silicon substrate
AU - Kaneko, Satoru
AU - Tokumasu, Takashi
AU - Yasui, Manabu
AU - Kurouchi, Masahito
AU - Yasuhara, Shigeo
AU - Endo, Tamio
AU - Azuma, Masaki
AU - Matsuda, Akufumi
AU - Yoshimoto, Mamoru
AU - Sahoo, Sumanta Kumar
AU - Sardar, Kripasindhu
AU - Ting, Jyh Ming
AU - Yoshimura, Masahiro
N1 - Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/6/1
Y1 - 2022/6/1
N2 - Direct growth of oxide films on silicon is usually difficult because of extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Schlom et. al. comprehensively investigate the thermodynamic stability of binary oxides. However the thermodynamic stability does not include factors for epitaxial growth such as lattice mismatch or crystallographic arrangement of oxide deposited on silicon surface. A magnesium oxide (MgO) was taken as an example of oxide materials and the absorption energy estimated on MgO placed on Si surface predicted the crystal orientation of epitaxial growth to be cubic on cubic [MgO(001) // Si(001) and MgO(100) // Si(100)]. These results agreed with experimental results observed on epitaxial MgO films deposited on Si surface. The evaluation of adsorption energy can be guideline for an epitaxial growth of oxide materials on silicon surface.
AB - Direct growth of oxide films on silicon is usually difficult because of extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Schlom et. al. comprehensively investigate the thermodynamic stability of binary oxides. However the thermodynamic stability does not include factors for epitaxial growth such as lattice mismatch or crystallographic arrangement of oxide deposited on silicon surface. A magnesium oxide (MgO) was taken as an example of oxide materials and the absorption energy estimated on MgO placed on Si surface predicted the crystal orientation of epitaxial growth to be cubic on cubic [MgO(001) // Si(001) and MgO(100) // Si(100)]. These results agreed with experimental results observed on epitaxial MgO films deposited on Si surface. The evaluation of adsorption energy can be guideline for an epitaxial growth of oxide materials on silicon surface.
UR - http://www.scopus.com/inward/record.url?scp=85125013959&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85125013959&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2022.152776
DO - 10.1016/j.apsusc.2022.152776
M3 - Article
AN - SCOPUS:85125013959
SN - 0169-4332
VL - 586
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 152776
ER -