Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio

Deepak Anandan, Venkatesan Nagarajan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Sankalp Kumar Singh, Ching-Ting Lee, Edward Yi Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 × 10−5 to 8.0 × 10−5 mol/min, wurtzite segment length of InSb NW increases from 16 ± 9 nm to 89 ± 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications.

Original languageEnglish
Pages (from-to)30-36
Number of pages7
JournalJournal of Crystal Growth
Volume522
DOIs
Publication statusPublished - 2019 Sep 15

Fingerprint

Phase control
phase control
Nanowires
nanowires
Crystals
crystals
zincblende
wurtzite
Crystal structure
Organic Chemicals
crystal structure
Organic chemicals
Interfacial energy
surface energy
metalorganic chemical vapor deposition
Chemical vapor deposition
Nucleation
Phase transitions
Metals
nucleation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Anandan, D., Nagarajan, V., Kakkerla, R. K., Yu, H. W., Ko, H. L., Singh, S. K., ... Chang, E. Y. (2019). Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio. Journal of Crystal Growth, 522, 30-36. https://doi.org/10.1016/j.jcrysgro.2019.06.016
Anandan, Deepak ; Nagarajan, Venkatesan ; Kakkerla, Ramesh Kumar ; Yu, Hung Wei ; Ko, Hua Lun ; Singh, Sankalp Kumar ; Lee, Ching-Ting ; Chang, Edward Yi. / Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio. In: Journal of Crystal Growth. 2019 ; Vol. 522. pp. 30-36.
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Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio. / Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Lee, Ching-Ting; Chang, Edward Yi.

In: Journal of Crystal Growth, Vol. 522, 15.09.2019, p. 30-36.

Research output: Contribution to journalArticle

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AU - Anandan, Deepak

AU - Nagarajan, Venkatesan

AU - Kakkerla, Ramesh Kumar

AU - Yu, Hung Wei

AU - Ko, Hua Lun

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AU - Lee, Ching-Ting

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