Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio

Deepak Anandan, Venkatesan Nagarajan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Sankalp Kumar Singh, Ching Ting Lee, Edward Yi Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 × 10−5 to 8.0 × 10−5 mol/min, wurtzite segment length of InSb NW increases from 16 ± 9 nm to 89 ± 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications.

Original languageEnglish
Pages (from-to)30-36
Number of pages7
JournalJournal of Crystal Growth
Volume522
DOIs
Publication statusPublished - 2019 Sep 15

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Anandan, D., Nagarajan, V., Kakkerla, R. K., Yu, H. W., Ko, H. L., Singh, S. K., Lee, C. T., & Chang, E. Y. (2019). Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio. Journal of Crystal Growth, 522, 30-36. https://doi.org/10.1016/j.jcrysgro.2019.06.016