(SrTiO3/BaTiO3) n multilayer films with Pt bottom and top electrodes have been prepared by a double target radio frequency (RF) magnetron sputtering, and their dielectric properties have been characterized as a function of temperature, frequency, bias voltage, and applied voltage. The X-ray diffraction (XRD) pattern reveals that the deposited (SrTiO3/BaTiO3) n multilayer films have a designed modulation. The interfaces within the multilayer films appear smooth and dense without any microcracks, and the adhesion is very good. The dielectric constant of the (SrTiO3/BaTiO3) n multilayer film increases with increasing layer number (n), and the leakage current density is less than 1 × 10-8 A•cm-2 for the applied voltage less than 5 V for the 450-nm-thick (SrTiO3/BaTiO3) n multilayer films. The remanent polarization (P r) and the coercive field (E c) of the 350-nm-thick (SrTiO 3/BaTiO3)4 multilayer films are 7 μC•cm-2 and 60 kV•cm-1, respectively, exhibiting ferroelectricity. (SrTiO3/BaTiO3)4 multilayer films have a high E c and a lower P r, as compared with the bulk BaTiO3 single crystal. The 450-nm-thick (SrTiO3/BaTiO3)4 multilayer films have a leakage current density-voltage characteristic, which makes them suitable for application in DRAMs capacitors.
|Number of pages||8|
|Journal||Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science|
|Publication status||Published - 2010 May|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys