Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition

Ramesh Kumar Kakkerla, Deepak Anandan, Sankalp Kumar Singh, Hung Wei Yu, Ching Ting Lee, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

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In this letter, the growth of gold-free GaSb on various InAs nanowire (NW) crystal structures using metal-organic chemical vapor deposition is demonstrated. The GaSb was grown radially and axially on wurtzite (WZ), zinc-blend (ZB) and polytype (mixture of WZ and ZB) InAs NWs. The effect of the various InAs crystal structures on GaSb was studied. This study demonstrates the control of the crystal growth of InAs and InAs/GaSb heterostructure NWs through the optimization of growth parameters and crystal transfer from core to shell, such techniques are necessary for the growth of NWs for future nanoelectronic device applications, such as TFET.

Original languageEnglish
Article number015502
JournalApplied Physics Express
Issue number1
Publication statusPublished - 2019 Jan 1


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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