Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition

Ramesh Kumar Kakkerla, Deepak Anandan, Sankalp Kumar Singh, Hung Wei Yu, Ching Ting Lee, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this letter, the growth of gold-free GaSb on various InAs nanowire (NW) crystal structures using metal-organic chemical vapor deposition is demonstrated. The GaSb was grown radially and axially on wurtzite (WZ), zinc-blend (ZB) and polytype (mixture of WZ and ZB) InAs NWs. The effect of the various InAs crystal structures on GaSb was studied. This study demonstrates the control of the crystal growth of InAs and InAs/GaSb heterostructure NWs through the optimization of growth parameters and crystal transfer from core to shell, such techniques are necessary for the growth of NWs for future nanoelectronic device applications, such as TFET.

Original languageEnglish
Article number015502
JournalApplied Physics Express
Volume12
Issue number1
DOIs
Publication statusPublished - 2019 Jan 1

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Organic chemicals
Nanowires
metalorganic chemical vapor deposition
Chemical vapor deposition
nanowires
Crystal structure
wurtzite
crystal structure
Zinc
zinc
Metals
Nanoelectronics
Crystal growth
Heterojunctions
crystal growth
Gold
gold
Crystals
optimization
crystals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kakkerla, Ramesh Kumar ; Anandan, Deepak ; Singh, Sankalp Kumar ; Yu, Hung Wei ; Lee, Ching Ting ; Dee, Chang Fu ; Majlis, Burhanuddin Yeop ; Chang, Edward Yi. / Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition. In: Applied Physics Express. 2019 ; Vol. 12, No. 1.
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Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition. / Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Lee, Ching Ting; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi.

In: Applied Physics Express, Vol. 12, No. 1, 015502, 01.01.2019.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kakkerla, Ramesh Kumar

AU - Anandan, Deepak

AU - Singh, Sankalp Kumar

AU - Yu, Hung Wei

AU - Lee, Ching Ting

AU - Dee, Chang Fu

AU - Majlis, Burhanuddin Yeop

AU - Chang, Edward Yi

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