Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se2 Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process

Shih Chen Chen; Nian Zu She; Kaung Hsiung Wu; Yu Ze Chen; Wei Sheng Lin; Jia Xing Li; Fang I. Lai; Jenh Yih Juang; Chih Wei Luo; Lung Teng Cheng; Tung Po Hsieh; Hao Chung Kuo; Yu Lun Chueh

doi:10.1021/acsami.7b00082

Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se₂ Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process

Shih Chen Chen
, Nian Zu She
, Kaung Hsiung Wu
, Yu Ze Chen
, Wei Sheng Lin
, Jia Xing Li
, Fang I. Lai
, Jenh Yih Juang
, Chih Wei Luo
, Lung Teng Cheng
, Tung Po Hsieh
, Hao Chung Kuo
, Yu Lun Chueh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu(In,Ga)Se₂ (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of In_Se, V_Se, and In_Cu. Consequently, the shunt leakage current and recombination centers were both greatly decreased, resulting in a near 20% enhancement in photovoltaic conversion efficiency.

Original language	English
Pages (from-to)	14006-14012
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	16
DOIs	https://doi.org/10.1021/acsami.7b00082
Publication status	Published - 2017 Apr 26

All Science Journal Classification (ASJC) codes

General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/acsami.7b00082

Cite this

Chen, S. C., She, N. Z., Wu, K. H., Chen, Y. Z., Lin, W. S., Li, J. X., Lai, F. I., Juang, J. Y., Luo, C. W., Cheng, L. T., Hsieh, T. P., Kuo, H. C., & Chueh, Y. L. (2017). Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se₂ Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process. ACS Applied Materials and Interfaces, 9(16), 14006-14012. https://doi.org/10.1021/acsami.7b00082

@article{1a147df7bf6f4d0a8d1cb41ef4df858d,

title = "Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se2 Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process",

abstract = "Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu(In,Ga)Se2 (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of InSe, VSe, and InCu. Consequently, the shunt leakage current and recombination centers were both greatly decreased, resulting in a near 20\% enhancement in photovoltaic conversion efficiency.",

author = "Chen, \{Shih Chen\} and She, \{Nian Zu\} and Wu, \{Kaung Hsiung\} and Chen, \{Yu Ze\} and Lin, \{Wei Sheng\} and Li, \{Jia Xing\} and Lai, \{Fang I.\} and Juang, \{Jenh Yih\} and Luo, \{Chih Wei\} and Cheng, \{Lung Teng\} and Hsieh, \{Tung Po\} and Kuo, \{Hao Chung\} and Chueh, \{Yu Lun\}",

note = "Funding Information: The research was supported by Ministry of Science and Technology through Grants: 105-2112-M-009-011, 105-2811-M-009-092 106-2917-I-564-024, 104-2628-M-007-004-MY3, 104-2221-E-007-048-MY3 105-2633-M-007-003, and 104-2622-M-007-002-CC2, and by MOE ATU program at NCTU through Grant 106W964 as well as by National Tsing Hua University through Grant 106N509CE1. Y.L.C. greatly appreciates the use of facilities at CNMM, National Tsing Hua University, through Grant 105A0088J4. Funding for this work was also provided by the Department of Industrial Technology, Ministry of Economic Affairs, Taiwan. Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = apr,

day = "26",

doi = "10.1021/acsami.7b00082",

language = "English",

volume = "9",

pages = "14006--14012",

journal = "ACS Applied Materials and Interfaces",

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}

Chen, SC, She, NZ, Wu, KH, Chen, YZ, Lin, WS, Li, JX, Lai, FI, Juang, JY, Luo, CW, Cheng, LT, Hsieh, TP, Kuo, HC & Chueh, YL 2017, 'Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se₂ Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process', ACS Applied Materials and Interfaces, vol. 9, no. 16, pp. 14006-14012. https://doi.org/10.1021/acsami.7b00082

Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se₂ Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process. / Chen, Shih Chen; She, Nian Zu; Wu, Kaung Hsiung et al.
In: ACS Applied Materials and Interfaces, Vol. 9, No. 16, 26.04.2017, p. 14006-14012.

Research output: Contribution to journal › Article › peer-review

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T1 - Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se2 Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process

AU - Chen, Shih Chen

AU - She, Nian Zu

AU - Wu, Kaung Hsiung

AU - Chen, Yu Ze

AU - Lin, Wei Sheng

AU - Li, Jia Xing

AU - Lai, Fang I.

AU - Juang, Jenh Yih

AU - Luo, Chih Wei

AU - Cheng, Lung Teng

AU - Hsieh, Tung Po

AU - Kuo, Hao Chung

AU - Chueh, Yu Lun

N1 - Funding Information: The research was supported by Ministry of Science and Technology through Grants: 105-2112-M-009-011, 105-2811-M-009-092 106-2917-I-564-024, 104-2628-M-007-004-MY3, 104-2221-E-007-048-MY3 105-2633-M-007-003, and 104-2622-M-007-002-CC2, and by MOE ATU program at NCTU through Grant 106W964 as well as by National Tsing Hua University through Grant 106N509CE1. Y.L.C. greatly appreciates the use of facilities at CNMM, National Tsing Hua University, through Grant 105A0088J4. Funding for this work was also provided by the Department of Industrial Technology, Ministry of Economic Affairs, Taiwan. Publisher Copyright: © 2017 American Chemical Society.

PY - 2017/4/26

Y1 - 2017/4/26

N2 - Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu(In,Ga)Se2 (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of InSe, VSe, and InCu. Consequently, the shunt leakage current and recombination centers were both greatly decreased, resulting in a near 20% enhancement in photovoltaic conversion efficiency.

AB - Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu(In,Ga)Se2 (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of InSe, VSe, and InCu. Consequently, the shunt leakage current and recombination centers were both greatly decreased, resulting in a near 20% enhancement in photovoltaic conversion efficiency.

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