Crystalline SiGe films grown on Si substrates using laser-assisted plasma-enhanced chemical vapor deposition at low temperature

Ching Ting Lee, Jun Hung Cheng, Hsin Ying Lee

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Compared with conventional plasma-enhanced chemical vapor deposition, laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) can be used to deposit crystalline SiGe films on Si substrates at low temperature. In the LAPECVD system, a C O2 laser with a wavelength of 10.6 μm was utilized to assist the pyrolytical decomposition of Si H4 and Ge H4 reactant gases. The resultant Si0.78 Ge0.22 films were obtained and verified through the use of the Auger electron spectroscopy measurement. As the diffraction pattern of a glancing incident angle X-ray diffraction measurement had indicated, several significant diffraction peaks corresponding to a diamond-cubic structure at (111), (220), and (311) were clearly observed. Crystalline SiGe films were also identified by the electron diffraction pattern of high-resolution transmission electron microscopy images.

Original languageEnglish
Article number091920
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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