Crystalline structure and surface morphology of the AlN films sputtered on 64°-YX LiNbO3

Feng Chih Chang, Sean Wu, Maw Shung Lee, Jian Shuo Yu, Chia Hsiung Chang, Cheng-Liang Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64°-YX LiNbO3 substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 and 5m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).

Original languageEnglish
Title of host publication2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages146-148
Number of pages3
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
Duration: 2007 May 272007 May 31

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics

Other

Other2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
CountryJapan
CityNara-city
Period07-05-2707-05-31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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