Crystalline structure and surface morphology of the AlN films sputtered on 64°-YX LiNbO3

Feng Chih Chang; Sean Wu; Maw Shung Lee; Jian Shuo Yu; Chia Hsiung Chang; Cheng-Liang Huang

doi:10.1109/ISAF.2007.4393196

Crystalline structure and surface morphology of the AlN films sputtered on 64°-YX LiNbO₃

Feng Chih Chang, Sean Wu, Maw Shung Lee, Jian Shuo Yu, Chia Hsiung Chang, Cheng-Liang Huang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64°-YX LiNbO₃ substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 and 5m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	146-148
Number of pages	3
DOIs	https://doi.org/10.1109/ISAF.2007.4393196
Publication status	Published - 2007 Dec 1
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: 2007 May 27 → 2007 May 31

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Other

Other	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country	Japan
City	Nara-city
Period	07-05-27 → 07-05-31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2007.4393196

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Chang, F. C., Wu, S., Lee, M. S., Yu, J. S., Chang, C. H., & Huang, C-L. (2007). Crystalline structure and surface morphology of the AlN films sputtered on 64°-YX LiNbO₃. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 146-148). [4393196] (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393196

@inproceedings{b82b886c21674da783e1e46a499eccae,

title = "Crystalline structure and surface morphology of the AlN films sputtered on 64°-YX LiNbO3",

abstract = "Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64°-YX LiNbO3 substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 and 5m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).",

author = "Chang, {Feng Chih} and Sean Wu and Lee, {Maw Shung} and Yu, {Jian Shuo} and Chang, {Chia Hsiung} and Cheng-Liang Huang",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ISAF.2007.4393196",

language = "English",

isbn = "1424413338",

series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "146--148",

booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

note = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF ; Conference date: 27-05-2007 Through 31-05-2007",

}

Chang, FC, Wu, S, Lee, MS, Yu, JS, Chang, CH & Huang, C-L 2007, Crystalline structure and surface morphology of the AlN films sputtered on 64°-YX LiNbO₃. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393196, IEEE International Symposium on Applications of Ferroelectrics, pp. 146-148, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 07-05-27. https://doi.org/10.1109/ISAF.2007.4393196

Crystalline structure and surface morphology of the AlN films sputtered on 64°-YX LiNbO₃. / Chang, Feng Chih; Wu, Sean; Lee, Maw Shung; Yu, Jian Shuo; Chang, Chia Hsiung; Huang, Cheng-Liang.

2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 146-148 4393196 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Crystalline structure and surface morphology of the AlN films sputtered on 64°-YX LiNbO3

AU - Chang, Feng Chih

AU - Wu, Sean

AU - Lee, Maw Shung

AU - Yu, Jian Shuo

AU - Chang, Chia Hsiung

AU - Huang, Cheng-Liang

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N2 - Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64°-YX LiNbO3 substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 and 5m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).

AB - Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64°-YX LiNbO3 substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 and 5m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).

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